Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100)

1999 ◽  
Vol 85 (7) ◽  
pp. 3614-3618 ◽  
Author(s):  
Eliane Maillard-Schaller ◽  
B. I. Boyanov ◽  
S. English ◽  
R. J. Nemanich
2021 ◽  
Vol 129 (2) ◽  
pp. 025301
Author(s):  
Vitaly S. Proshchenko ◽  
Manoj Settipalli ◽  
Artem K. Pimachev ◽  
Sanghamitra Neogi

2014 ◽  
Vol 57 ◽  
pp. 198-205 ◽  
Author(s):  
Robert S. Phillips ◽  
Tatyana V. Demidkina ◽  
Nicolai G. Faleev
Keyword(s):  

RSC Advances ◽  
2014 ◽  
Vol 4 (18) ◽  
pp. 9247-9254 ◽  
Author(s):  
Polina Tereshchuk ◽  
Rafael L. H. Freire ◽  
Juarez L. F. Da Silva

Ultrathin metal films supported on transition-metal surfaces have been considered as promising catalysts as their chemical activity can be controlled by substrate strain, composition, and ligand effects, however, our atomistic understanding of the atomic structure of those systems is far from satisfactory.


1997 ◽  
Vol 12 (6) ◽  
pp. 1661-1665 ◽  
Author(s):  
V. Švorčík ◽  
I. Miček ◽  
V. Rybka ◽  
V. Hnatowicz ◽  
F. Černý

The samples of Upilex R polyimide (PI) were irradiated with 90 keV N+ ions to the fluences from 5 × 1014 to 2 × 1017 cm−2, and sheet resistance (Rs) and thermoelectric power (TEP) were measured in dependence on the ion fluence and the sample temperature. The Rs achieves its minimum for the ion fluence of 1 × 1017 cm−2, and from the measured temperature dependence of Rs it may be concluded that the ion beam modified PI exhibits semiconductor properties with charge transport governed by the variable range hopping mechanism. The measured TEP of the PI samples irradiated to the fluences above 1 × 1016 cm−2 is low (the order of μV/K). Such properties are typical for metals, and the conclusion is that the charge transport in the irradiated PI samples is contributed by the mechanisms which are characteristic for both semiconductors and metals. The role of conjugated double bonds was examined by measuring absorption UV-VIS spectra. The number of the conjugated double bonds correlates with observed Rs, and the width of the forbidden band, determined from UV-VIS spectra, is a decreasing function of the ion fluence.


Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3916
Author(s):  
Dooho Choi

With the explosive development of optoelectronic devices, the need for high-performance transparent conductive (TCE) electrodes for optoelectronic devices has been increasing accordingly. The two major TCE requirements are (1) visible light average transmittance higher than 80% and (2) sheet resistance lower than 10 Ω/sq. In this study, we investigated the critical role of the top and bottom ZnO thicknesses for the ZnO/Cu/ZnO electrodes prepared on glass substrates. It was shown that the required Cu thickness to meet the conductivity requirement is 8 nm, which was fixed and then the thicknesses of the top and ZnO layers were independently varied to experimentally determine the optimized conditions for optical transparency. The thicknesses of the top and bottom ZnO layers were both found to significantly affect the peak transmittance as well as the average visible light transmittance. The ZnO/Cu/ZnO electrode exhibits peak and average transmittance of 95.4% and 87.4%, excluding the transmittance of glass substrates, along with a sheet resistance of 9.7 Ω/sq, with a corresponding Haacke’s figure of merit (φH=Tave10Rs) of 0.064, which exceeds the reported value for the ZnO/Cu/ZnO electrodes, manifesting the need of experimental optimization in this study.


2021 ◽  
Vol MA2021-01 (24) ◽  
pp. 931-931
Author(s):  
Masashi Rindo ◽  
Naoki Okamoto ◽  
Takeyasu Saito ◽  
Akira Kitajima

Author(s):  
Hyunjoo Cho ◽  
Seungjun Chung ◽  
Jaewook Jeong

Abstract Stretchable electrodes with high stretching capability and low sheet resistance were developed using a metal/silver nanowires (AgNWs)/metal hybrid structure on a poly-dimethylsiloxane (PDMS) substrate. A low sheet resistance around 100 mΩ/square was achieved using the hybrid structures of Ag/AgNWs/Ag and Cu/AgNWs/Cu electrodes. The stretching capability under single and multi-cycling strain conditions was greatly improved due the AgNWs in-between top and bottom metal electrodes. The random connection of AgNWs generates new current path over the various cracks and wavy structures of the metal electrodes, which improve the initial resistance, the stretching capability of single strain up to 16 % and the resistance stability of 100 times cycling strain for the electrodes. Using a simple resistor model, it was shown that the hybrid structure is effective to improve the stretching capability of the stretchable metal electrodes due to random connection of AgNWs in-between the metal electrodes.


1969 ◽  
Vol 74 (18) ◽  
pp. 4571-4580 ◽  
Author(s):  
B. L. Davis ◽  
D. N. Blair

2007 ◽  
Vol 56 (12) ◽  
pp. 1107-1110 ◽  
Author(s):  
Chien-Chih Chou ◽  
Fei-Yi Hung ◽  
Truan-Sheng Lui

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