Note: Circuit design for direct current and alternating current electrochemical etching of scanning probe microscopy tips

2012 ◽  
Vol 83 (3) ◽  
pp. 036105 ◽  
Author(s):  
Matthew M. Jobbins ◽  
Annette F. Raigoza ◽  
S. Alex Kandel
Keyword(s):  
Circuit Design ◽  
Direct Current ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Alternating Current ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals Systematic electrochemical etching of various metal tips for tunneling spectroscopy and scanning probe microscopy

2021 ◽  
Vol 92 (1) ◽  
pp. 015124
Author(s):  
Jiawei Zhang ◽  
Pinyuan Wang ◽  
Xuao Zhang ◽  
Haoran Ji ◽  
Jiawei Luo ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Tunneling Spectroscopy ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals The Initial Phase of Photoelectrochemical Anodization of Si in Alkaline Media Investigated by Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Scanning Probe Microscopy (SPM)

2013 ◽  
Vol 1539 ◽  
Author(s):  
M. Letilly ◽  
K. Skorupska ◽  
M. Aggour ◽  
M. Kanis ◽  
H.-J. Lewerenz
Keyword(s):  
Scanning Probe Microscopy ◽  
Photoelectron Spectroscopy ◽  
Initial Phase ◽  
Electrochemical Etching ◽  
Anodic Oxide ◽  
Open Circuit ◽  
Scanning Probe ◽  
Alkaline Media ◽  
Oxide Formation ◽  
Probe Microscopy

ABSTRACTAnodic oxide formation and chemical and electrochemical etching of n-Si(111) have been investigated in alkaline media. Due to the complexity of the processes, the investigation has been restricted to the initial phase where a transitory anodic photocurrent peak is observed slightly positive from the open circuit potential (ocp). In-system photoelectron spectroscopy, performed at the U 49/2 beamline at Bessy, shows sub-monolayer silicon surface oxidation and remnant H-termination, indicating island-type oxide formation. Scanning probe microscopy shows the formation of macropores with 300-500 nm diameter and an average depth of 5-8 nm. The discussion comprises chemical and electrochemical dissolution mechanisms and routes to development of nanoemitter fuel generating devices.

scholarly journals Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips

2012 ◽  
Vol 83 (6) ◽  
pp. 063708 ◽  
Author(s):  
Yasser Khan ◽  
Hisham Al-Falih ◽  
Yaping Zhang ◽  
Tien Khee Ng ◽  
Boon S. Ooi
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Probe Microscopy

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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