scholarly journals Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

2012 ◽  
Vol 111 (6) ◽  
pp. 063102 ◽  
Author(s):  
A. Anopchenko ◽  
A. Tengattini ◽  
A. Marconi ◽  
N. Prtljaga ◽  
J. M. Ramírez ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Pulsed Excitation ◽  
Light Emitting ◽  
Erbium Doped

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m

1988 ◽  
Vol 24 (12) ◽  
pp. 740 ◽  
Author(s):  
P.S. Whitney ◽  
K. Uwai ◽  
H. Nakagome ◽  
K. Takahei
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Erbium-doped Si1-xGex/Si structures for light emitting diodes

2000 ◽  
Vol 15 (2) ◽  
pp. 91-97 ◽  
Author(s):  
A T Naveed ◽  
J H Evans-Freeman ◽  
K D Vernon-Parry ◽  
A C Wright ◽  
D C Houghton ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

1998 ◽  
Vol 83 (3) ◽  
pp. 1426-1428 ◽  
Author(s):  
Shoou-Jinn Chang ◽  
Deepak K. Nayak ◽  
Yasuhiro Shiraki
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Pulsed excitation of low-mobility light-emitting diodes: Implication for organic lasers

1999 ◽  
Vol 74 (19) ◽  
pp. 2764-2766 ◽  
Author(s):  
N. Tessler ◽  
D. J. Pinner ◽  
V. Cleave ◽  
D. S. Thomas ◽  
G. Yahioglu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Pulsed Excitation ◽  
Light Emitting

scholarly journals Electroluminescent properties of erbium-doped III–N light-emitting diodes

2004 ◽  
Vol 84 (7) ◽  
pp. 1061-1063 ◽  
Author(s):  
J. M. Zavada ◽  
S. X. Jin ◽  
N. Nepal ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

1999 ◽  
Vol 75 (5) ◽  
pp. 647-649 ◽  
Author(s):  
E. Neufeld ◽  
M. Markmann ◽  
A. Vörckel ◽  
K. Brunner ◽  
G. Abstreiter
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped ◽  
P Type

Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

2008 ◽  
Vol 93 (3) ◽  
pp. 033502 ◽  
Author(s):  
R. Dahal ◽  
C. Ugolini ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

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