Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

2012 ◽  
Vol 100 (12) ◽  
pp. 123106 ◽  
Author(s):  
A. M. Chang ◽  
Hao Zhang ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Submicron Devices

Fabrication Techniques for Submicron Devices

1991 ◽  
pp. 51-89
Author(s):  
David K. Ferry ◽  
Robert O. Grondin
Keyword(s):  
Submicron Devices

Noise in Submicron Devices

1991 ◽  
pp. 363-396
Author(s):  
David K. Ferry ◽  
Robert O. Grondin
Keyword(s):  
Submicron Devices

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

Silicidation Strategy Of Sub-0.1 μm Junctions for Deep Submicron Devices

1995 ◽  
Vol 402 ◽  
Author(s):  
Jiunn-Yann Tsai ◽  
Carlton M. Osburn ◽  
Steve L. Hsia
Keyword(s):  
Series Resistance ◽  
Deep Submicron ◽  
Silicon On Insulator ◽  
Promising Alternative ◽  
Resistance Increase ◽  
Low Leakage ◽  
Submicron Devices ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
Silicon Interface

AbstractTwo major concerns for silicidation of ultra-shallow junctions, namely the silicon-consumption- induced junction leakage and the series resistance increase, were compared among conventional post-junction-silicide (PJS) contact, silicide-as-a-diffusion-source (SADS) contact, Silicon-On-Insulator (SOI) contact, and elevated-source-drain (ESD) contact. Even though we found that ESD contacts would be the ultimate solution for both problems, SOI and SADS contacts provide better resistance to silicon-consumption-induced series resistance increase over conventional PJS contact because both are able to maintain a high dopant concentration at the silicide/silicon interface and thus a low specific contact resistivity. While there is no junction leakage concern for SOI contact, the SADS junction is also distinguished by low leakage owing to its lack of implant damage in the silicon substrate and uniformly doped junction along the silicide/silicon interface contour. MOSFET devices with SADS source/drain were demonstrated with quarter-μm technology. Epitaxial cobalt disilicide (CoSi2) was formed using the Ti/Co bilayer technique as a diffusion source. While both ESD and SOI processes still suffer from process complexity, integration and materials issues, we conclude that SADS contacting is a promising alternative for deep submicron devices.

scholarly journals Transient Analysis of Silicon Devices Using the Hydrodynamic Model

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 283-286 ◽  
Author(s):  
Luigi Colalongo ◽  
Marina Valdinoci ◽  
Antonio Gnudi ◽  
Massimo Rudan
Keyword(s):  
Hydrodynamic Model ◽  
Transient Analysis ◽  
Velocity Overshoot ◽  
Silicon Devices ◽  
Switching Behaviour ◽  
Submicron Devices ◽  
Transient Case ◽  
Drain Region ◽  
Ballistic Diode ◽  
Mos Device

The analysis of the switching behaviour of submicron devices brings about the necessity of extending the solution of the hydrodynamic model to the transient case. The implementation of such model has been carried out and a few examples of simulation are presented here, showing the velocity-overshoot of a ballistic diode and the temperature spread in the drain region of a realistic MOS device.

Suppression of boron diffusion in deep submicron devices

2011 ◽  
Vol 29 (6) ◽  
pp. 062201 ◽  
Author(s):  
Michael A. Gribelyuk ◽  
Phil Oldiges ◽  
Paul A. Ronsheim ◽  
Jun Yuan ◽  
Leon Kimball
Keyword(s):  
Deep Submicron ◽  
Boron Diffusion ◽  
Submicron Devices

scholarly journals Open Problems in Quantum Simulation in Ultra-Submicron Devices

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 165-172 ◽  
Author(s):  
D. K. Ferry ◽  
J. R. Barker
Keyword(s):  
Quantum Dot ◽  
Quantum Transport ◽  
Quantum Simulation ◽  
Quantum Structures ◽  
Open Problems ◽  
Self Energy ◽  
Submicron Devices ◽  
High Carrier ◽  
Device Size

Quantum transport is becoming more significant as device size shrinks. For example, as device sizes are scaled below 0.1 μm, the number of impurities becomes quite small, so that they are no longer homogeneously distributed throughout the device volume and the carriers are localized into quantum boxes, in that self-energy corrections produced by locally high carrier densities will lead to quantum dot formation. This leads to the need to discuss transport through an array of such quantum structures. Here, we discuss several issues which must be considered in treating the transport through such devices.

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