Characterization of charge trapping in insulating films by a scanning electron microscope

1999 ◽  
Vol 85 (10) ◽  
pp. 7443-7447 ◽  
Author(s):  
J. Bigarré ◽  
P. Hourquebie
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Charge Trapping ◽  
Insulating Films ◽  
Scanning Electron

Dependence on crystallographic orientation of trapping properties in a polished MgO single crystal

2002 ◽  
Vol 80 (3) ◽  
pp. 285-289
Author(s):  
N Dammak ◽  
A Kallel ◽  
Z Fakhfakh ◽  
D Tréheux
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Crystallographic Orientation ◽  
Charge Trapping ◽  
Dislocation Network ◽  
Experimental Characterization ◽  
Space Charges ◽  
Scanning Electron ◽  
Crystallographic Orientations

It is well known that the presence of space charges in an insulator is correlated with electric breakdown. Many studies have been carried out on the experimental characterization of space charges and on phenomenological models of trapping and detrapping. In this paper, we outline the dependence on crystallographic orientations of the charge-trapping phenomenon in polished MgO. The charging phenomenon was characterized during and after electron injection by using a scanning electron microscope (SEM). It was shown that the trapping ability depends on the dislocation network of different crystallographic orientations. PACS No.: 72.20Jv

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Temperature effect on dielectric behavior of an industrial porcelain-type ceramic

2009 ◽  
Vol 87 (9) ◽  
pp. 973-980
Author(s):  
O. Hachicha ◽  
N. Ghorbel ◽  
A. Kallel ◽  
Z. Fakhfakh
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Charge Trapping ◽  
Dielectric Behavior ◽  
Mirror Image ◽  
Induced Current ◽  
Physical Mechanisms ◽  
Motion Process ◽  
Influence Of Temperature On ◽  
Scanning Electron

For a better understanding of the physical mechanisms involved in insulators submitted to electron irradiation inside a scanning electron microscope, it is important to investigate charge trapping and detrapping. The commonly used technique to deduce the trapping ability and the motion process of electric charges is based on two complementary experimental methods: the scanning electron microscope mirror effect (SEMME) and the induced current measurement (ICM). In this paper, our study is devoted to the influence of temperature on the behavior of porcelain materials during electron injection time. To evaluate the geometry of the trapped charge distribution, a detailed analysis using the mirror image formation and its evolution is developed.

Morphological Characterization of Fabricated Aluminum Interdigitated Electrodes on Silicon Substrate

2015 ◽  
Vol 1109 ◽  
pp. 381-384
Author(s):  
M. Safwan Azmi ◽  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Silicon Substrate ◽  
Morphological Characterization ◽  
Interdigitated Electrodes ◽  
Photolithography Process ◽  
Scanning Electron

The purpose of this paper is to study the morphological characterization of aluminum interdigitated electrodes (IDE) of different gap sizes on silicon substrate. The electrodes were fabricated using standard photolithography process and were done so with sizes of 12 μm, 10 μm and 7 μm. The electrodes were morphologically characterized using scanning electron microscope (SEM) and high-powered microscope (HPM).Keywords: morphological, interdigitated electrodes, aluminum

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