Erratum: “Strain dependence of hole mass and optical anisotropy in (110) quantum wells” [J. Appl. Phys. 82, 5711 (1997)]

1998 ◽  
Vol 84 (3) ◽  
pp. 1708-1708
Author(s):  
L.-H. Peng
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Strain Dependence

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

Oscillator strengths for the intersubband transitions in GaAs/InGa1–As quantum wells and its strain dependence

Optik ◽  
2016 ◽  
Vol 127 (11) ◽  
pp. 4903-4908 ◽  
Author(s):  
Melek Msahli ◽  
Hosni Saidi ◽  
Amira Ben Ahmed ◽  
Said Ridene ◽  
Habib Bouchriha
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Intersubband Transitions ◽  
Strain Dependence

In-plane optical anisotropy of parabolic and half-parabolic Cd1−xMnxTe quantum wells

2003 ◽  
Vol 126 (8) ◽  
pp. 467-471 ◽  
Author(s):  
K Kowalik ◽  
A Kudelski ◽  
J.A Gaj ◽  
T Wojtowicz ◽  
O Krebs ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy

In-plane optical anisotropy in InxGa1−xN∕GaN multiple quantum wells induced by Pockels effect

2005 ◽  
Vol 86 (1) ◽  
pp. 011924 ◽  
Author(s):  
H. J. Chang ◽  
C. H. Chen ◽  
L. Y. Huang ◽  
Y. F. Chen ◽  
T. Y. Lin
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Pockels Effect

Optical anisotropy of (11N) and vicinal (001) quantum wells

1995 ◽  
Vol 150 ◽  
pp. 431-435 ◽  
Author(s):  
Y. Kajikawa ◽  
O. Brandt ◽  
K. Kanamoto ◽  
N. Tsukada
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

2015 ◽  
Vol 117 (1) ◽  
pp. 015302 ◽  
Author(s):  
J. L. Yu ◽  
S. Y. Cheng ◽  
Y. F. Lai ◽  
Q. Zheng ◽  
Y. H. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

2008 ◽  
Vol 372 (10) ◽  
pp. 1691-1694 ◽  
Author(s):  
Chun-Nan Chen ◽  
Wei-Long Su ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
Wan-Tsang Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Mixing Effect ◽  
Band Mixing ◽  
Valence Band Mixing
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