Kinetics aspects of initial stage thin γ-Al2O3 film formation on single crystalline β-NiAl (110)

2012 ◽  
Vol 111 (3) ◽  
pp. 034312 ◽  
Author(s):  
Zhongfan Zhang ◽  
Keeyoung Jung ◽  
Long Li ◽  
Judith C. Yang
Keyword(s):  
Film Formation ◽  
Al2o3 Film ◽  
Single Crystalline ◽  
Initial Stage

Atomic-Scale Coordination Effects on the Initial Stage of Passive Film Formation in Fe-Cr Alloys

2020 ◽  
Vol MA2020-02 (8) ◽  
pp. 1161-1161
Author(s):  
Yusi Xie ◽  
Minglu Liu ◽  
Ashlee Aeillo ◽  
Karl Sieradzki
Keyword(s):  
Passive Film ◽  
Film Formation ◽  
Atomic Scale ◽  
Initial Stage

Isolated and assembled silver aggregates on the Si(001) surface: the initial stage of film formation

2021 ◽  
Vol 23 (7) ◽  
pp. 4161-4166
Author(s):  
Kai Huang ◽  
Xiaohang Huang ◽  
Jun Nogami
Keyword(s):  
Silver Film ◽  
Film Formation ◽  
Initial Stage

A series of silver intermediates (dimers, tetramers and chains) are identified, exhibiting rich dynamics en route to forming an extended monolayer silver film on the silicon(001) substrate.

Effects of compositional variations in an electrolyte containing water, ethanol, and ammonium tartrate on barrier anodic Al2O3 film formation

1990 ◽  
Vol 186 (2) ◽  
pp. 201-213
Author(s):  
J.K.G. Panitz ◽  
D.J. Sharp ◽  
F.E. Martinez ◽  
R.M. Merrill ◽  
K.J. Ward
Keyword(s):  
Film Formation ◽  
Ammonium Tartrate ◽  
Al2o3 Film ◽  
Compositional Variations

Growth of the Single-Crystalline ZnO Films on Si (111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2001 ◽  
Vol 692 ◽  
Author(s):  
Kazuto Koike ◽  
Takanori Tanite ◽  
Shigehiko Sasa ◽  
Masataka Inoue ◽  
Mitsuaki Yano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Zno Films ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Si Substrates ◽  
Initial Stage

AbstractThis report describes the growth of single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement shows that c-axis oriented ZnO films are easily grown on Si (111) substrates. However, in-plane random rotational domains are included in the ZnO films due to the inevitable oxidation of substrate surface at the initial stage of ZnO growth. By employing a thin CaF2 buffer layer between the ZnO films and Si substrates, we have succeeded in suppressing the generation of rotational domains and in obtaining an intense ultraviolet photoluminescence even at room temperature. These results indicate that the use of CaF2 buffer layer is promising for the growth of device-quality ZnO films on Si (111) substrates.

An Electron Microscope Study of Vapor-Liquid-Solid Growth in In and Sn Thin Films

1972 ◽  
Vol 30 ◽  
pp. 502-503
Author(s):  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Electron Microscope Study ◽  
Crystalline State ◽  
Film Formation ◽  
Stable State ◽  
Intermediate Formation ◽  
Direct Crystallization ◽  
Initial Stage ◽  
Bismuth Films ◽  
Thin Film Formation ◽  
Substrate Temperatures

Frankel concluded that evaporating atoms which settle and migrate on a substrate pass directly into the crystalline state, i.e. the initial stage of thin film formation is from vapor to solid (V→S). Semenov suggested that evaporating atoms settle, migrate on the substrate, form liquid nuclei, and crystallize at a later stage, i.e. growth is from vapor to liquid and then to solid [V→L(→S)]. This transformation would follow the thermodynamical step rule which states that a metastable system will transform into the next more stable state, and from this the transformation will take place to a stable state. Palatnik and Komnik examined bismuth films deposited onto glass plates with a temperature gradient and found that a substrate temperature , (Tm=melting temperature in °K) condensation proceeds by direct crystallization from vapor to solid (V-→S). For substrate temperatures , the condensation proceeds through an intermediate formation of liquid phase, i.e., V→L(→S).

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