Isolated and assembled silver aggregates on the Si(001) surface: the initial stage of film formation

2021 ◽  
Vol 23 (7) ◽  
pp. 4161-4166
Author(s):  
Kai Huang ◽  
Xiaohang Huang ◽  
Jun Nogami
Keyword(s):  
Silver Film ◽  
Film Formation ◽  
Initial Stage

A series of silver intermediates (dimers, tetramers and chains) are identified, exhibiting rich dynamics en route to forming an extended monolayer silver film on the silicon(001) substrate.

Atomic-Scale Coordination Effects on the Initial Stage of Passive Film Formation in Fe-Cr Alloys

2020 ◽  
Vol MA2020-02 (8) ◽  
pp. 1161-1161
Author(s):  
Yusi Xie ◽  
Minglu Liu ◽  
Ashlee Aeillo ◽  
Karl Sieradzki
Keyword(s):  
Passive Film ◽  
Film Formation ◽  
Atomic Scale ◽  
Initial Stage

Kinetics aspects of initial stage thin γ-Al2O3 film formation on single crystalline β-NiAl (110)

2012 ◽  
Vol 111 (3) ◽  
pp. 034312 ◽  
Author(s):  
Zhongfan Zhang ◽  
Keeyoung Jung ◽  
Long Li ◽  
Judith C. Yang
Keyword(s):  
Film Formation ◽  
Al2o3 Film ◽  
Single Crystalline ◽  
Initial Stage

An Electron Microscope Study of Vapor-Liquid-Solid Growth in In and Sn Thin Films

1972 ◽  
Vol 30 ◽  
pp. 502-503
Author(s):  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Electron Microscope Study ◽  
Crystalline State ◽  
Film Formation ◽  
Stable State ◽  
Intermediate Formation ◽  
Direct Crystallization ◽  
Initial Stage ◽  
Bismuth Films ◽  
Thin Film Formation ◽  
Substrate Temperatures

Frankel concluded that evaporating atoms which settle and migrate on a substrate pass directly into the crystalline state, i.e. the initial stage of thin film formation is from vapor to solid (V→S). Semenov suggested that evaporating atoms settle, migrate on the substrate, form liquid nuclei, and crystallize at a later stage, i.e. growth is from vapor to liquid and then to solid [V→L(→S)]. This transformation would follow the thermodynamical step rule which states that a metastable system will transform into the next more stable state, and from this the transformation will take place to a stable state. Palatnik and Komnik examined bismuth films deposited onto glass plates with a temperature gradient and found that a substrate temperature , (Tm=melting temperature in °K) condensation proceeds by direct crystallization from vapor to solid (V-→S). For substrate temperatures , the condensation proceeds through an intermediate formation of liquid phase, i.e., V→L(→S).

Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
R. Kröger ◽  
S. Einfeldt ◽  
Z. J. Reitmeier ◽  
R. Chierchia ◽  
P. Ryder ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Film Formation ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Initial Stage ◽  
Metal Organic ◽  
Significant Spatial Variation ◽  
Two Phases

ABSTRACTThe microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy in conjunction with energy dispersive X-ray spectroscopy. A significant spatial variation of composition was found in 100 nm thick layers the nature of which could be traced back to the initial stage of film formation. Upon nucleation two phases are formed: a wetting layer and isolated islands of high and low aluminum content, respectively. The observed results are discussed in terms of strain and growth rates.

Computer Simulation Study of Film Formation Process

1992 ◽  
Vol 280 ◽  
Author(s):  
Yasushi Sasajima ◽  
Syubo Taya ◽  
Satoru Ozawa ◽  
Ryoichi Yamamoto
Keyword(s):  
Formation Process ◽  
Md Simulation ◽  
Film Growth ◽  
Film Formation ◽  
Atomic Structures ◽  
Embedded Atom ◽  
Initial Stage ◽  
The Difference ◽  
Simple Pair ◽  
Eam Potential

ABSTRACTThe initial stage of film formation process was studied by 2 dimensional (2D) Monte-Carlo (MC) simulation and 3D molecular dynamics (MD) simulation. The atomistic interaction was simple pair-wise Lcnnard-Joncs potential for the 2D MC study and embedded atom potential (EAM potential) for the 3D MD simulation. The 2D MC study has revealed the dependence of film growth mode on the potential parameters that correspond to atomic size and binding energy. More realistic MD simulation has been performed using EAM potential for the three kinds of systems, Ni/Cu(111), Ag/Cu(111) and Au/Ni(111). The relaxed atomic structures of such systems showed the difference of atomic combination; coherent interface was obtained for Ni/Cu(111) system, incoherent interface with specific rotational relationships for Ag/Cu(111) andAu/Ni(111).

scholarly journals Observation of Initial Stage of Co and Co-Ni Alloy Film Formation by Pulsed Current Electrodeposition.

Hyomen Kagaku ◽  
2000 ◽  
Vol 21 (8) ◽  
pp. 488-495
Author(s):  
Koh-ichi MARUYAMA ◽  
Akiyuki MATSUSHITA ◽  
Hiroo NUMATA ◽  
Osamu NITTONO
Keyword(s):  
Film Formation ◽  
Alloy Film ◽  
Pulsed Current ◽  
Initial Stage ◽  
Ni Alloy

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

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