The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

2012 ◽  
Vol 100 (6) ◽  
pp. 063509 ◽  
Author(s):  
Lu-Hao Wang ◽  
Wen Yang ◽  
Qing-Qing Sun ◽  
Peng Zhou ◽  
Hong-Liang Lu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

2012 ◽  
Vol 101 (6) ◽  
pp. 063104 ◽  
Author(s):  
S. Pinto ◽  
R. Krishna ◽  
C. Dias ◽  
G. Pimentel ◽  
G. N. P. Oliveira ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Doped Graphene ◽  
Activity Dependent

Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures

2017 ◽  
Vol 3 (5) ◽  
pp. 1600418 ◽  
Author(s):  
Gopinathan Anoop ◽  
Varij Panwar ◽  
Tae Yeon Kim ◽  
Ji Young Jo
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Zno Nanorods ◽  
Multilayer Structures

scholarly journals Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Geetika Khurana ◽  
Nitu Kumar ◽  
Manish Chhowalla ◽  
James F. Scott ◽  
Ram S. Katiyar
Keyword(s):  
Gold Nanoparticles ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Au Nps ◽  
Conducting Path ◽  
Switching Characteristics

Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

Resistive Switching in Al/Graphene Oxide/Al Structure

2011 ◽  
Vol 50 (7R) ◽  
pp. 070110 ◽  
Author(s):  
Gennady N. Panin ◽  
Olesya O. Kapitanova ◽  
Sang Wuk Lee ◽  
Andrey N. Baranov ◽  
Tae Won Kang
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching
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