Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

1998 ◽  
Vol 84 (2) ◽  
pp. 1155-1157 ◽  
Author(s):  
T. Suski ◽  
J. Jun ◽  
M. Leszczyński ◽  
H. Teisseyre ◽  
S. Strite ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
High Temperature Annealing ◽  
High Pressure High Temperature ◽  
Optical Activation ◽  
Ion Implanted

The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

AbstractWe have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

scholarly journals The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High Temperature Annealing of Ion-Implanted GaN Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 740-746
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

We have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

scholarly journals Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
S. Strite ◽  
A. Pelzmann ◽  
T. Suski ◽  
M. Leszczynski ◽  
J. Jun ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Optical Quality ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Optical Activation ◽  
Pl Intensity ◽  
Anneal Temperature ◽  
Good Optical Quality ◽  
Ion Implanted

We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N2. The N2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.

The effect of high-pressure–high-temperature annealing on paramagnetic defects in diamond

2003 ◽  
Vol 15 (39) ◽  
pp. S2941-S2949 ◽  
Author(s):  
R N Pereira ◽  
W Gehlhoff ◽  
A J Neves ◽  
N A Sobolev ◽  
L Rino ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
High Temperature Annealing ◽  
High Pressure High Temperature
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