High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

2007 ◽  
Vol 90 (12) ◽  
pp. 122102 ◽  
Author(s):  
K. Ueda ◽  
M. Kasu ◽  
T. Makimoto
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Activation Method ◽  
High Temperature Annealing ◽  
Ion Implanted

The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

AbstractWe have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

scholarly journals The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High Temperature Annealing of Ion-Implanted GaN Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 740-746
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

We have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

scholarly journals Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
S. Strite ◽  
A. Pelzmann ◽  
T. Suski ◽  
M. Leszczynski ◽  
J. Jun ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Optical Quality ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Optical Activation ◽  
Pl Intensity ◽  
Anneal Temperature ◽  
Good Optical Quality ◽  
Ion Implanted

We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N2. The N2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.

Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

1998 ◽  
Vol 84 (2) ◽  
pp. 1155-1157 ◽  
Author(s):  
T. Suski ◽  
J. Jun ◽  
M. Leszczyński ◽  
H. Teisseyre ◽  
S. Strite ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
High Temperature Annealing ◽  
High Pressure High Temperature ◽  
Optical Activation ◽  
Ion Implanted

scholarly journals High pressure synthesis of BN and BCN crystals and their functionalization

2014 ◽  
Vol 70 (a1) ◽  
pp. C751-C751
Author(s):  
Takashi Taniguchi
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
High Purity ◽  
Chemical Vapour ◽  
Attractive Potential ◽  
Luminescence Spectra ◽  
Hard Material ◽  
High Temperature Annealing ◽  
Electrical Insulator ◽  
Carbon Impurity

Hexagonal BN (hBN) and cubic BN (cBN) are known as the representative crystal structures of BN. The former is chemically and thermally stable, and has been widely used as an electrical insulator and heat-resistant materials. The latter, which is a high-density phase, is an ultra-hard material second only to diamond. Recently, some progresses in the synthesis of high purity BN crystals were achieved by using Ba-BN as a solvent material at high pressure crystal growth [1]. Band-edge natures (cBN Eg=6.2eV and hBN Eg=6eV) were characterized by their optical properties. The key issue to obtain high purity crystals is to reduce oxygen and carbon contamination in the growth circumstances. It should be emphasized that hBN exhibits attractive potential for deep ultraviolet (DUV) light emitter [2 ] and also superior properties as substrate of graphene devices [3]. In this study, the effect of carbon impurity in BN is investigated. Three types of experimental approaches were carried out; (1) synthesis of high purity hBN single crystals and its characterization with respect to residual carbon, (2) high temperature solid state diffusion of carbon into hBN and its characterization, and (3) high temperature annealing of turbostratic B-C-N(t-BCN) compound under high pressure. t-BCN flakes obtained by chemical vapour deposition process was annealed near 3000C and 2GPa so as to become well crystallized.At annealing near 3000C at 2GPa with graphite, carbon incorporation of 1E21/cm3 in hBN was achieved with exhibiting totally different Cathode Luminescence spectra feature with high purity hBN crystals. Since major carbon contribution may affect the crystal structure of the 2-D layers stacking in hBN system, phase stability of BCN ternary phase will be introduced by the experimental results of high temperature annealing. Furthermore, effect of carbon impurity upon the synthesis of wurtzite BN from highly crystalline hBN via martensitic phase transformation will also be introduced.

Impact of CF4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing

2010 ◽  
Vol 645-648 ◽  
pp. 783-786
Author(s):  
Tatsunori Sugimoto ◽  
Masataka Satoh ◽  
Tohru Nakamura ◽  
K. Mashimo ◽  
Hiroshi Doi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Energy Range ◽  
Plasma Treatment ◽  
Surface Roughening ◽  
High Temperature Annealing ◽  
Small Surface ◽  
Step Structure ◽  
The Impact ◽  
Ion Implanted

The impact of CF4 plasma treatment on the surface roughening of SiC has been investigated for N ion implanted SiC(0001) which is implanted with the energy range from 15 to 120 keV at a dose of 9.2 x 1014/cm2. The N ion implanted sample, which is processed by CF4 plasma, shows small surface roughness of 1.6 nm after annealing at 1700 oC for 10 min, while the sample without CF4 plasma treatment shows the large surface roughness (6.6nm) and micro step structure. XPS measurements reveals that CF4 plasma treatment is effective to dissolved the residual oxide on the surface of SiC which is not removed by BHF acid of SiO2 layer on SiC. It is strongly suggested that the formation of micro step structure with the increase of the surface roughness is promoted by the residual oxide such as SiCOx, on SiC.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

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