Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique

1998 ◽  
Vol 84 (2) ◽  
pp. 1095-1100 ◽  
Author(s):  
X. Zhang ◽  
D. H. Rich ◽  
C.-K. Lin ◽  
P. D. Dapkus
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Native Oxide ◽  
Cathodoluminescence Study

Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

1997 ◽  
Vol 71 (21) ◽  
pp. 3108-3110 ◽  
Author(s):  
Chao-Kun Lin ◽  
Xingang Zhang ◽  
P. Daniel Dapkus ◽  
Daniel H. Rich
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Native Oxide

Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing

1992 ◽  
Vol 7 (6) ◽  
pp. 744-751 ◽  
Author(s):  
M T Furtado ◽  
M S S Loural ◽  
E A Sato ◽  
M A Sacilotti
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Zn Diffusion

Exciton localization and quantum efficiency—A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells

2003 ◽  
Vol 93 (2) ◽  
pp. 1048-1053 ◽  
Author(s):  
U. Jahn ◽  
S. Dhar ◽  
O. Brandt ◽  
H. T. Grahn ◽  
K. H. Ploog ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Exciton Localization ◽  
Cathodoluminescence Study

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Observation of a non-constant Cd diffusion coefficient during the thermal annealing of Zn1-Cd Se quantum wells

2020 ◽  
Vol 846 ◽  
pp. 155698
Author(s):  
Miguel Ulises Salazar-Tovar ◽  
Frantisek Sutara ◽  
Isaac Hernández-Calderón
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Thermal Annealing

Enhanced luminescence from InAlP-InGaP quantum wells with native-oxide windows

1996 ◽  
Vol 32 (4) ◽  
pp. 401
Author(s):  
M.R. Islam ◽  
R.D. Dupuis ◽  
A.L. Holmes ◽  
N.F. Gardner ◽  
A.P. Curtis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Native Oxide ◽  
Enhanced Luminescence

Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence

1999 ◽  
Vol 38 (Part 2, No. 3B) ◽  
pp. L298-L300 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Shigeki Makino ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Chemical Beam Epitaxy
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