Numerical study of the role of a background gas and system geometry in pulsed laser deposition

1998 ◽  
Vol 83 (11) ◽  
pp. 6050-6054 ◽  
Author(s):  
T. E. Itina ◽  
A. A. Katassonov ◽  
W. Marine ◽  
M. Autric
Keyword(s):  
Pulsed Laser Deposition ◽  
Numerical Study ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Background Gas ◽  
System Geometry

Role of target conditioning on the thermo-optical response of bismuth nanostructures produced by pulsed laser deposition

2012 ◽  
Vol 110 (4) ◽  
pp. 863-867 ◽  
Author(s):  
R. Serna ◽  
M. Jiménez de Castro ◽  
J. Toudert ◽  
E. Haro-Poniatowski ◽  
J. García López
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Response ◽  
Laser Deposition

Role of vanadium content in ZnO thin films grown by pulsed laser deposition

2007 ◽  
Vol 254 (4) ◽  
pp. 1228-1231 ◽  
Author(s):  
M.E. Koleva ◽  
P.A. Atanasov ◽  
N.N. Nedialkov ◽  
H. Fukuoka ◽  
M. Obara
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Vanadium Content ◽  
Laser Deposition ◽  
Zno Thin Films

Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition

2003 ◽  
Vol 94 (1) ◽  
pp. 594-597 ◽  
Author(s):  
L. Yan ◽  
L. B. Kong ◽  
J. S. Pan ◽  
C. K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Oxidation of ablated silicon during pulsed laser deposition in a background gas with different oxygen partial pressures

2019 ◽  
Vol 196 ◽  
pp. 00008
Author(s):  
Sergey V. Starinskiy ◽  
Alexey A. Rodionov ◽  
Yuri G. Shukhov ◽  
Alexander V. Bulgakov
Keyword(s):  
Optical Properties ◽  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Oxidation State ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxidation Degree ◽  
Total Oxidation ◽  
Partial Pressures ◽  
Background Gas

We have analysed changes in the oxidation state of SiOx films produced by pulsed laser deposition in a background gas with different partial pressures of oxygen. The optical properties of the films in IR range are shown to be close to those of SiO2 while the total oxidation degree is considerably less than 2. It is suggested that the film consists of oxidized and unoxidized regions due to preferential oxidation of the periphery of the silicon ablation plume during expansion. These regions are overlapping in the film if the laser beam is scanned on the target.

Pulsed Laser Deposition Thin Films of Pr0.7Sr0.3MnO3:  The Role of Growth Temperature

2000 ◽  
Vol 12 (10) ◽  
pp. 2858-2868 ◽  
Author(s):  
B. Mercey ◽  
J. Wolfman ◽  
W. Prellier ◽  
M. Hervieu ◽  
Ch. Simon ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals The role of particle energy and pulsed particle flux in physical vapor deposition and pulsed–laser deposition

1999 ◽  
Vol 75 (26) ◽  
pp. 4091-4093 ◽  
Author(s):  
Stefan G. Mayr ◽  
Michael Moske ◽  
Konrad Samwer ◽  
Maggie E. Taylor ◽  
Harry A. Atwater
Keyword(s):  
Pulsed Laser Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Particle Flux ◽  
Pulsed Laser ◽  
Particle Energy ◽  
Laser Deposition
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