scholarly journals Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAI

2012 ◽  
Vol 111 (7) ◽  
pp. 07D313 ◽  
Author(s):  
I.-M. Imort ◽  
P. Thomas ◽  
G. Reiss ◽  
A. Thomas
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Heusler Compounds

Influence of disorder on anomalous Hall effect for Heusler compounds

2011 ◽  
Vol 83 (17) ◽  
Author(s):  
E. Vilanova Vidal ◽  
H. Schneider ◽  
G. Jakob
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Heusler Compounds

scholarly journals Progress Review on Topological Properties of Heusler Materials

2020 ◽  
Vol 213 ◽  
pp. 02016
Author(s):  
Zhi Lin
Keyword(s):  
Hall Effect ◽  
Surface States ◽  
Anomalous Hall Effect ◽  
Edge State ◽  
Chiral Anomaly ◽  
Dirac Fermion ◽  
High Symmetry ◽  
Heusler Compounds ◽  
Topological Properties ◽  
Topological State

Starting from crystal, electronic and magnetic structures of Heusler compounds, this paper studies the new topological materials related to Heusler compounds and their topological properties, such as anomalous Hall effect, skyrmions, chiral anomaly, Dirac fermion, Weyl fermion, transverse Nernst thermoelectric effect, thermal spintronics and topological surface states. It can be discovered that the topological state of Heusler compound can be well protected due to its high symmetry, thus producing rich topological properties. Heusler materials belonged to Weyl semimetals usually have strong anomalous Hall effect, and the Heusler materials with doping or Anomalous Nernst Effect (ANE) usually have higher thermoelectric figure of merit. These anomalous effects are closely related to the strong spin–orbit interaction. In application, people can use the non-dissipative edge state of quantum anomalous Hall effect to develop a new generation of low-energy transistors and electronic devices. The conversion efficiency of thermoelectric materials can be improved by ANE, and topological superconductivity can be used to promote the progress of quantum computation.

scholarly journals From Colossal to Zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design

2018 ◽  
Vol 8 (4) ◽  
Author(s):  
Kaustuv Manna ◽  
Lukas Muechler ◽  
Ting-Hui Kao ◽  
Rolf Stinshoff ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Heusler Compounds ◽  
Berry Curvature

scholarly journals Anomalous Hall effect in Weyl semimetal half-Heusler compounds RPtBi (R = Gd and Nd)

2018 ◽  
Vol 115 (37) ◽  
pp. 9140-9144 ◽  
Author(s):  
Chandra Shekhar ◽  
Nitesh Kumar ◽  
V. Grinenko ◽  
Sanjay Singh ◽  
R. Sarkar ◽  
...  
Keyword(s):  
Hall Effect ◽  
Muon Spin ◽  
Surface States ◽  
Anomalous Hall Effect ◽  
Chiral Anomaly ◽  
Heusler Compounds ◽  
Weyl Semimetal ◽  
Spin Resonance ◽  
Topological Surface ◽  
Topological Semimetals

Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R = rare earth), have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly, and planar Hall effect have been observed experimentally. Here, we report an unusual intrinsic anomalous Hall effect (AHE) in the antiferromagnetic Heusler Weyl semimetal compounds GdPtBi and NdPtBi that is observed over a wide temperature range. In particular, GdPtBi exhibits an anomalous Hall conductivity of up to 60 Ω−1⋅cm−1 and an anomalous Hall angle as large as 23%. Muon spin-resonance (μSR) studies of GdPtBi indicate a sharp antiferromagnetic transition (TN) at 9 K without any noticeable magnetic correlations above TN. Our studies indicate that Weyl points in these half-Heuslers are induced by a magnetic field via exchange splitting of the electronic bands at or near the Fermi energy, which is the source of the chiral anomaly and the AHE.

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Anomalous Hall effect in a magnetically extended topological insulator heterostructure

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Anomalous Hall Effect
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