Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

2012 ◽  
Vol 100 (3) ◽  
pp. 031105 ◽  
Author(s):  
Wei Yang ◽  
Ding Li ◽  
Ningyang Liu ◽  
Zhao Chen ◽  
Lei Wang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer

Advantage of tapered and graded AlGaN electron blocking layer in InGaN-based blue laser diodes

2013 ◽  
Vol 10 (3) ◽  
pp. 346-349 ◽  
Author(s):  
Wei Yang ◽  
Ding Li ◽  
Juan He ◽  
Xiaodong Hu
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Blocking Layer ◽  
Electron Blocking Layer

scholarly journals Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Mateusz Hajdel ◽  
Grzegorz Muzioł ◽  
Krzesimir Nowakowski-Szkudlarek ◽  
Marcin Siekacz ◽  
Paweł Wolny ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Blocking Layer ◽  
Carrier Injection ◽  
Drift Diffusion Model ◽  
Optical Mode ◽  
Drift Diffusion ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Nitride Laser

The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

2018 ◽  
Vol 116 ◽  
pp. 114-121 ◽  
Author(s):  
Agata Bojarska ◽  
Jakub Goss ◽  
Szymon Stanczyk ◽  
Irina Makarowa ◽  
Dario Schiavon ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Graded Index ◽  
Nitride Laser

Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer

2017 ◽  
Vol 64 (8) ◽  
pp. 3226-3233 ◽  
Author(s):  
Chia-Ying Su ◽  
Charng-Gan Tu ◽  
Wei-Heng Liu ◽  
Chun-Han Lin ◽  
Yu-Feng Yao ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Mg Doping

PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED AlxGa1-xN ELECTRON BLOCKING LAYER

2011 ◽  
Vol 20 (03) ◽  
pp. 515-520
Author(s):  
Y. ZHANG ◽  
J.-P. LIU ◽  
T.-T. KAO ◽  
S. KIM ◽  
Y.-C. LEE ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Performance Enhancement ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Electron Accumulation ◽  
Continuous Wave Operation

A step-graded Al x Ga 1- x N electron blocking layer (EBL) is introduced to the InGaN -based edge-emitting blue-violet laser diode (LD) structure to suppress the undesired built-in interface polarization charges. When compared to a conventional abrupt Al 0.18 Ga 0.82 N EBL design, the step-graded Al x Ga 1- x N EBL design may help reduce the electron accumulation at the edge of the active region and hence improve the quantum efficiency in LD operation. The effects of the step-graded Al x Ga 1- x N EBL on the fabricated device performance are also investigated. LDs with the step-graded Al x Ga 1- x N EBL demonstrated significantly reduced threshold current density and increased slope efficiency under the continuous-wave operation.

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