Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Ju-Wan Lee; Jong-Ho Lee

doi:10.1063/1.3678023

Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3678023 ◽

2012 ◽

Vol 100 (3) ◽

pp. 033501 ◽

Cited By ~ 5

Author(s):

Ju-Wan Lee ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Cited By ~ 9

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

Applied Physics Letters ◽

10.1063/1.3543901 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023505 ◽

Cited By ~ 2

Author(s):

Ju-Wan Lee ◽

Chan Hyeong Park ◽

Hyungcheol Shin ◽

Byung-Gook Park ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Edge Current ◽

High K ◽

Telegraph Noise ◽

Gate Edge

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Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.038005 ◽

2014 ◽

Vol 53 (3) ◽

pp. 038005

Author(s):

San-Lein Wu ◽

Hsu-Feng Chiu ◽

Yee-Shyi Chang ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Cited By ~ 1

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec19 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC19 ◽

Cited By ~ 10

Author(s):

Toshiki Obara ◽

Akihiro Yonezawa ◽

Akinobu Teramoto ◽

Rihito Kuroda ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Time Constants ◽

Telegraph Noise

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2and high-kgate dielectrics

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.03df02 ◽

2014 ◽

Vol 53 (3S2) ◽

pp. 03DF02 ◽

Cited By ~ 2

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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An automated system for measurement of random telegraph noise in metal-oxide-semiconductor field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.24373 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1217-1219 ◽

Cited By ~ 19

Author(s):

K.K. Hung ◽

P.K. Ko ◽

C. Hu ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Automated System ◽

Random Telegraph Noise ◽

Telegraph Noise

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Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc24 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC24 ◽

Cited By ~ 2

Author(s):

Bo-Chin Wang ◽

San-Lein Wu ◽

Yu-Ying Lu ◽

Chien-Wei Huang ◽

Chung-Yi Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Random Telegraph Noise ◽

Tensile Stresses ◽

Telegraph Noise

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