Evidence of direct correlation between out-of-plane lattice parameter and metal-insulator transition temperature in oxygen-depleted manganite thin films

2012 ◽  
Vol 100 (4) ◽  
pp. 042404 ◽  
Author(s):  
P. Orgiani ◽  
A. Yu. Petrov ◽  
R. Ciancio ◽  
A. Galdi ◽  
L. Maritato ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Lattice Parameter ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Plane Lattice ◽  
Out Of Plane

Influence of Fe3O4 on metal–insulator transition temperature of La0.7Ca0.3MnO3 thin films

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE

2010 ◽  
Vol 24 (27) ◽  
pp. 5451-5456 ◽  
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
X. F. CAO ◽  
W. X. ZHANG ◽  
B. PENG
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Transport Properties ◽  
Silicon Substrate ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Higher Temperature

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.

Giant Magnetoresistance Phenomenon in Laser Ablated La0.6y0.07ca0.33mnox Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
Dhananjay Kumar ◽  
R. Kalyanaraman ◽  
J. Narayan ◽  
David K. Christen
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Lattice Parameter ◽  
Insulator Transition ◽  
X Ray Diffraction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Dependent Scattering ◽  
Resistance Peak

ABSTRACTMicrostructural and magnetoresistance properties of La0.6Y0.07Ca0.33MnOx (Y-doped LCMO) thin films grown in-situ by pulsed laser ablation have been studied. Transmission election microscopy and x-ray diffraction measurements have shown that the Y-doped LCMO thin films grow epitaxially on (100) LaAl03 substrates and are cubic with a lattice parameter of 3.849 ?. The as-deposited films exhibited a metal-insulator transition at 130 K and a giant magnetoresistance (GMR) at 125 K with a MR ratio (dR/RH) of 1500% in the presence of a magnetic field of 6 Tesla. Such a colossal value of MR ratio for as-deposited Y-doped LCMO films is quite promising keeping in view the fact that these films were unannealed and not optimized. We ascribe this magnetoresistance to spin-dependent electron scattering coupled with the presence of intervening O2. ions across Mn3+ and Mn4+ with suppressed separation between Mn-O layers caused by smaller sized Y-dopant. The effect of annealing on the positive-shift of metal-insulator transition temperature and the improvement in GMR ratio has also been discussed. We also report a non-ohmic response in the Y-doped LCMO films which is observed only in the region of the resistance peak and lends support to a conduction mechanism in these materials based on spin-dependent scattering of electrons.

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

scholarly journals Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification

AIP Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 015302 ◽  
Author(s):  
H. Kim ◽  
N. A. Charipar ◽  
J. Figueroa ◽  
N. S. Bingham ◽  
A. Piqué
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films

Metal-insulator transition temperature enhancement in La0.7Ca0.3MnO3 thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 103712 ◽  
Author(s):  
M. Salvato ◽  
A. Vecchione ◽  
A. De Santis ◽  
F. Bobba ◽  
A. M. Cucolo
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Temperature Enhancement
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