Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

2012 ◽  
Vol 100 (2) ◽  
pp. 023506 ◽  
Author(s):  
Jaewook Jeong ◽  
Joonwoo Kim ◽  
Gwang Jun Lee ◽  
Byeong-Dae Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Probe Method ◽  
Intrinsic Parameter

scholarly journals DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries

2020 ◽  
Vol 41 (10) ◽  
pp. 1512-1515
Author(s):  
August Arnal ◽  
Albert Crespo-Yepes ◽  
Eloi Ramon ◽  
Lluis Teres ◽  
Rosana Rodriguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Organic Thin Film Transistors ◽  
Small Signal ◽  
Organic Thin Film ◽  
Signal Parameter ◽  
Dc Characterization

Organic Thin-Film Transistors: Part II—Parameter Extraction

2009 ◽  
Vol 56 (12) ◽  
pp. 2962-2968 ◽  
Author(s):  
M. Jamal Deen ◽  
Ognian Marinov ◽  
Ute Zschieschang ◽  
Hagen Klauk
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals A Review for Compact Model of Thin-Film Transistors (TFTs)

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 599 ◽  
Author(s):  
Nianduan Lu ◽  
Wenfeng Jiang ◽  
Quantan Wu ◽  
Di Geng ◽  
Ling Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Circuit Design ◽  
Surface Potential ◽  
Radio Frequency Identification ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Theoretical Description ◽  
Compact Model ◽  
Compact Models ◽  
Identification Tags

Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

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