Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation

1998 ◽  
Vol 83 (6) ◽  
pp. 3367-3373 ◽  
Author(s):  
T. Stoica ◽  
L. Vescan ◽  
M. Goryll
Keyword(s):  
Critical Thickness ◽  
Plastic Relaxation ◽  
Strained Sige

Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation

2006 ◽  
Vol 203 (14) ◽  
pp. 3506-3511 ◽  
Author(s):  
A. Rastelli ◽  
M. Stoffel ◽  
U. Denker ◽  
T. Merdzhanova ◽  
O. G. Schmidt
Keyword(s):  
Plastic Relaxation ◽  
Strained Sige

scholarly journals Drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si

2020 ◽  
Author(s):  
Youya Wagatsuma ◽  
Md. Mahfuz Alam ◽  
Kazuya Okada ◽  
Michihiro Yamada ◽  
Kohei HAMAYA ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Drastic Increase ◽  
Strained Sige

Investigation of Plastic Relaxation in Si1-xGex/Si Deposited by Selective Epitaxy

1998 ◽  
Vol 533 ◽  
Author(s):  
S. Wickenhäuser ◽  
L. Vescan
Keyword(s):  
Growth Temperature ◽  
Critical Thickness ◽  
Activation Barrier ◽  
Nucleation Site ◽  
Plastic Relaxation ◽  
Misfit Dislocations ◽  
Optical Micrograph ◽  
Site Density ◽  
Initial Stage ◽  
Nucleation Site Density

AbstractSi1-xGex/Si heterostructures with different layer thicknesses grown by selective LPCVD epitaxy at different growth temperatures were investigated with regard to plastic relaxation. AFM and optical micrograph were performed to determine the dislocation density. From the analysis of the misfit dislocations at the initial stage of relaxation of the samples grown at 700°C it was possible to determine the nucleation site density and an activation energy of 2.8 eV for the heterogeneous nucleation of misfit dislocations. While the critical thickness hc for a given Ge content increases with decreasing growth temperature between 800°C-680°C one observes a dramatic decay of hc, at a growth temperature of 625°C. For growth at 625°C it was found that this activation barrier is drastically decreased.

Critical thickness for plastic relaxation of SiGe on Si(001) revisited

2011 ◽  
Vol 110 (8) ◽  
pp. 083529 ◽  
Author(s):  
J. M. Hartmann ◽  
A. Abbadie ◽  
S. Favier
Keyword(s):  
Critical Thickness ◽  
Plastic Relaxation

Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures

2010 ◽  
Vol 3 (11) ◽  
pp. 111002 ◽  
Author(s):  
Erin C. Young ◽  
Chad S. Gallinat ◽  
Alexey E. Romanov ◽  
Anurag Tyagi ◽  
Feng Wu ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Plastic Relaxation

Increased Critical Thickness for Strained SiGe on Ge-on-Si(111)

2020 ◽  
Vol 98 (5) ◽  
pp. 499-503
Author(s):  
Wagatsuma Youya ◽  
Md. M Alam ◽  
Kazuya Okada ◽  
Yusuke Hoshi ◽  
Michihiro Yamada ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Strained Sige

Increased Critical Thickness for Strained SiGe on Ge-on-Si(111)

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1724-1724
Author(s):  
Wagatsuma Youya ◽  
Md. M Alam ◽  
Kazuya Okada ◽  
Yusuke Hoshi ◽  
Michihiro Yamada ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Strained Sige

Si1−xGex Island Formation by Post-Growth Anneal on Supercritical Layers Grown by RPCVD

2000 ◽  
Vol 618 ◽  
Author(s):  
K. Grimm ◽  
L. Vescan ◽  
L.K. Nanver ◽  
C.C.G. Visser ◽  
H. Lüthl
Keyword(s):  
Epitaxial Growth ◽  
Low Temperatures ◽  
Critical Thickness ◽  
Plastic Relaxation ◽  
Size Distributions ◽  
Uniform Size ◽  
High Hydrogen ◽  
Strong Emission ◽  
Order Of Magnitude ◽  
Degree Of Control

ABSTRACTSiGe island layers have been created by post growth anneal on supercritical layers grown at low temperatures (500°C) and high hydrogen pressures (40 Torr). The epitaxial growth has been performed in a commercially available single wafer RPCVD reactor using SiH2Cl2 and GeH4 as precursor gasses. SiGe layers grown under these conditions exceed the critical thickness for the onset of elastic relaxation reported for lower hydrogen pressures as well as the critical thickness for plastic relaxation by more than one order of magnitude. A subsequent anneal step is used to form the islands. This procedure allows some degree of control in the formation of SiGe islands. High island densities and uniform size distributions were achieved. Photoluminescence as well as electroluminescence measurements of these layers show strong emission from SiGe.

Various technic for the measurement of step thickness on crystal surfaces

1978 ◽  
Vol 36 (1) ◽  
pp. 438-439
Author(s):  
C. Boulesteix ◽  
C. Colliex ◽  
C. Mory ◽  
B. Pardo ◽  
D. Renard
Keyword(s):  
Critical Thickness ◽  
Symmetric Case ◽  
Transmitted Intensity ◽  
Crystal Surfaces ◽  
Bright Field ◽  
Excited Wave ◽  
Highly Sensitive ◽  
Contrast Mechanisms ◽  
Step Thickness ◽  
Thickness Variations

Contrast mechanisms, which are responsible of the various types of image formation, are generally thickness dependant. In the following, two imaging modes in the 100 kV CTEM are described : they are highly sensitive to thickness variations and can be used for quantitative estimations of step heights.Detailed calculations (1) of the bright-field intensity have been carried out in the 3 (or 2N+l)-beam symmetric case. They show that in given conditions, the two important symmetric Bloch waves interfere most strongly at a critical thickness for which they have equal emergent amplitudes (the more excited wave at the entrance surface is also the more absorbed). The transmitted intensity I for a Nd2O3 specimen has been calculated as a function of thickness t. The capacity of the method to detect a step and measure its height can be more clearly deduced from a plot of dl/Idt as shown in fig. 1.

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