Structural characterization of BaTiO3 thin films grown by molecular beam epitaxy

1998 ◽  
Vol 83 (5) ◽  
pp. 2458-2461 ◽  
Author(s):  
Yasuhiro Yoneda ◽  
Tooru Okabe ◽  
Kiyoshi Sakaue ◽  
Hikaru Terauchi ◽  
Hirofumi Kasatani ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam

scholarly journals Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 21 (10) ◽  
pp. 563-567
Author(s):  
Dong-Seok Lim ◽  
Eun-Jung Shin ◽  
Se-Hwan Lim ◽  
Seok-Kyu Han ◽  
Hyo-Sung Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Oxide Thin Films

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Characterization of GaAs thin films grown by molecular beam epitaxy on Si-on-insulator

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1078
Author(s):  
Zhu Wenhua ◽  
Lin Chenglu ◽  
Yu Yuehui ◽  
Li Aizhen ◽  
Zou Shichang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Growth of InN By MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Series Of Experiments

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 124104 ◽  
Author(s):  
H. Shibata ◽  
H. Tampo ◽  
K. Matsubara ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films
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