Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

2011 ◽  
Author(s):  
T. H. Ghong ◽  
S.-H. Han ◽  
J.-M. Chung ◽  
J. S. Byun ◽  
D. E. Aspnes ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Spectroscopic Ellipsometry ◽  
Critical Dimension

Multiscale Simulation for Exploring Photo-Chemical Processes to Mitigate the Critical Dimension Variability of Contact Hole in EUV Lithography

2021 ◽  
Author(s):  
Sungwoo Park ◽  
Hyungwoo Lee ◽  
Muyoung Kim ◽  
Taegyeom Kim ◽  
Byunghoon Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Extreme Ultraviolet ◽  
Critical Dimension ◽  
Multiscale Simulation ◽  
Chemical Processes ◽  
Production Yield ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Patterned Surface ◽  
Euv Lithography

In extreme ultraviolet lithography (EUVL), non-uniformity of patterned surface roughness of contact holes results in pattern failures such as bridging- or missing holes, which affect production yield. In this study,...

scholarly journals Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075111 ◽  
Author(s):  
Merve Karakaya ◽  
Elif Bilgilisoy ◽  
Ozan Arı ◽  
Yusuf Selamet
Keyword(s):  
Surface Roughness ◽  
Spectroscopic Ellipsometry ◽  
Ex Situ ◽  
Surface Roughness Estimation

Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1426-1428 ◽  
Author(s):  
T. H. Ghong ◽  
S.-H. Han ◽  
J.-M. Chung ◽  
J. S. Byun ◽  
Y. D. Kim ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Dimension ◽  
Roughness Analysis

POST-ANNEALING EFFECTS ON THE STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILMS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY

2010 ◽  
Vol 24 (06) ◽  
pp. 595-605 ◽  
Author(s):  
Y. INRITSAPONG ◽  
P. CHINDAUDOM ◽  
N. NUNTAWONG ◽  
V. PATTHANASETTHAKUL ◽  
M. HORPHATHUM ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Spectroscopic Ellipsometry ◽  
Annealing Temperature ◽  
Analysis Data ◽  
Optical And Electrical Properties ◽  
Optical Index ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Annealing Effects

ITO thin films were coated on unheated glass and Si -wafer (100) substrates by ion-assisted evaporation. The effects of post annealing, in vacuum at 250°C and 350°C for 1 h, on the structural, optical and electrical properties were studied. The structure was characterized by X-ray diffraction (XRD). The surface morphology of the films was investigated by atomic force microscopy (AFM). The optical properties were evaluated by spectrophotometer and spectroscopic ellipsometry (SE). The resistivity was measured by the four-point probes method. It was found that the increase of post-annealing temperature would improve the film crystallinity and electrical properties. The preferred orientation of ITO thin film after annealing is (222). The resistivity of the as-deposited film is found to be 5.52 × 10-4 Ωcm and decreases to 2.11 × 10-4 Ωcm after annealing at 350°C. The AFM image reveals that the surface roughness decreases with increasing annealing temperature. The uniqueness test based on SE analysis data has been applied for ITO modeling. This modeling indicates that the film microstructure consists of three layers including the higher-index ITO layer, the effective medium approximation (EMA) layer to represent a slightly lower optical index, and the surface roughness layer on top. The EMA thickness and its relative composition decrease with increasing annealing temperature. The extinction coefficient in the IR region increases whereas the refractive index decreases with increasing annealing temperature.

Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

1986 ◽  
Vol 74 ◽  
Author(s):  
P. G. Snyder ◽  
A. Massengale ◽  
K. Memarzadeh ◽  
J. A. Woollam ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Void Fraction ◽  
Spectroscopic Ellipsometry ◽  
Low Energy ◽  
Near Surface ◽  
Cu Ions ◽  
Microscopic Surface ◽  
Ion Implanted

AbstractImplantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

Spectroscopic Ellipsometry Study on Surface Roughness and Optical Property of AZO Films Prepared by Direct-Current Magnetron Reactive Sputtering Method

2008 ◽  
Vol 25 (12) ◽  
pp. 4223-4226 ◽  
Author(s):  
Lin Qing-Geng ◽  
Gao Xiao-Yong ◽  
Gu Jin-Hua ◽  
Chen Yong-Sheng ◽  
Yang Shi-E ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Optical Property ◽  
Direct Current ◽  
Spectroscopic Ellipsometry ◽  
Reactive Sputtering
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