Low Resistive and Uniform CoSi[sub 2] Formation with Ti Capping Layer

2011 ◽  
Author(s):  
Jaesang Lee ◽  
Hyungchul Kim ◽  
Sanghyun Woo ◽  
Hyerin Lee ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Capping Layer ◽  
Ti Capping Layer

Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer

2008 ◽  
Vol 517 (1) ◽  
pp. 462-464
Author(s):  
Xinhong Cheng ◽  
Zhaorui Song ◽  
Yumei Xing ◽  
Yuehui Yu ◽  
Dashen Shen
Keyword(s):  
Interfacial Layer ◽  
Dielectric Film ◽  
Capping Layer ◽  
Ti Capping Layer

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

2014 ◽  
Vol 35 (9) ◽  
pp. 912-914 ◽  
Author(s):  
Zheng Fang ◽  
Xin Peng Wang ◽  
Joon Sohn ◽  
Bao Bin Weng ◽  
Zhi Ping Zhang ◽  
...  
Keyword(s):  
Capping Layer ◽  
Ti Capping Layer

Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst Nanopaticles

2005 ◽  
Author(s):  
Rui-Ling Lai ◽  
Yao-Ren Chang ◽  
Chuan-Ping Juan ◽  
Tsung-Ying Chuang ◽  
Kao-Chao Lin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Breakdown Field ◽  
Capping Layer ◽  
Ti Capping Layer

The influence of Ti and TiN on the thermal stability of CoSi2.

2001 ◽  
Vol 670 ◽  
Author(s):  
C. Detavernier ◽  
Guo-Ping Ru ◽  
R.L. Van Meirhaeghe ◽  
K. Maex
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Surface Roughness ◽  
Thermal Stress ◽  
Grain Boundary ◽  
Multilayer Structures ◽  
Strong Increase ◽  
Capping Layer ◽  
Thermal Stability Of ◽  
Ti Capping Layer

ABSTRACTIn this work, AFM and sheet resistance measurements are used to characterize the thermal stability of thin CoSi2 films. We were particularly interested in the influence of different multilayer structures on the topography and surface roughness. Four different multilayer structures (Co/Si, TiN/Co/Si, Ti/Co/Si and Co/Ti/Si) were investigated. Thermal degradation of CoSi2 formed from a standard Co/Si structure is found to have an activation energy of about 4.2 eV, independent of layer thickness (in agreement with previous results by Alberti et al.). A TiN capping layer is shown to improve the thermal stability. However, if the TiN layer is too thick (e.g. 50 nm), a new failure mode is observed: although the TiN prevents grain boundary grooving of the silicide, the thermal stress induced by the TiN causes the CoSi2 layer to crack. For a Ti capping layer, a strong increase of the thermal stability of the CoSi2 layer is observed, even if the Ti capping layer is removed by a selective etching step after the first RTP annealing. The presence of a very thin Ti-O-N containing layer on the CoSi2surface seems to strongly decrease surface diffusion and in this way reduce the tendency for grain boundary grooving.

CoSi2 formation using a Ti capping layer - The influence of processing conditions on CoSi2 nucleation.

2001 ◽  
Vol 670 ◽  
Author(s):  
C. Detavernier ◽  
R.L. Van Meirhaeghe ◽  
K. Maex
Keyword(s):  
Layer Thickness ◽  
Process Parameters ◽  
Annealing Temperature ◽  
Formation Temperature ◽  
Processing Conditions ◽  
Capping Layer ◽  
Oxygen Contamination ◽  
Robust Process ◽  
Oxygen Impurities ◽  
Ti Capping Layer

ABSTRACTA reactive Ti capping layer is needed to getter oxygen contamination and to make the cobalt silicidation reaction a more robust process. However, the presence of a Ti capping layer induces two other effects (in addition to the beneficial gettering of oxygen impurities): the formation temperature of CoSi2 is increased and the CoSi2 layer has a strong (220) preferential orientation. Because of the current technological importance of the Ti/Co/Si system, we have made a detailed investigation of the influence of several process parameters (annealing temperature, selective etching, layer thickness) on the nucleation of CoSi2 in the Ti/Co/Si system. Moreover, it is shown that the addition of Ni (i.e. a Ti/Co/Ni/Si or Ti/Ni/Co/Si structure) causes a decrease of the CoSi2 nucleation temperature.

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