scholarly journals Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

2011 ◽  
Vol 99 (21) ◽  
pp. 212101 ◽  
Author(s):  
Y. P. Chiu ◽  
B. C. Huang ◽  
M. C. Shih ◽  
J. Y. Shen ◽  
P. Chang ◽  
...  
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Band Offsets

Determination of Band Offsets in Heterostructured Colloidal Nanorods Using Scanning Tunneling Spectroscopy

Nano Letters ◽  
2008 ◽  
Vol 8 (9) ◽  
pp. 2954-2958 ◽  
Author(s):  
Dov Steiner ◽  
Dirk Dorfs ◽  
Uri Banin ◽  
Fabio Della Sala ◽  
Liberato Manna ◽  
...  
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Band Offsets

Scanning Tunneling Spectroscopy

2021 ◽  
pp. 363-378
Author(s):  
C. Julian Chen
Keyword(s):  
Sample Surface ◽  
Experimental Methods ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Atomic Scale ◽  
Detailed Account ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
High Tc ◽  
Spectroscopy Experiment

This chapter discusses various aspects of scanning tunneling spectroscopy (STS). It is an extension of the classical tunneling spectroscopy experiment to nanometer-scale or atomic-scale features on the sample surface. First, the electronics for STS is presented. The nature of STS as a convolution of tip DOS and sample DOS is discussed. Special tip treatment for the STS experiment, often different from the atomic-resolution STM, is described. The purpose is to produce tips with flat DOS, instead of special tip orbitals. Experimental methods to determine tip DOS is discussed. A detailed account of the inelastic scanning tunneling spectroscopy, or STM-IETS, is then discussed. It includes the principles, the electronics, and the instrumental broadening of the features. This chapter concludes with the STS study of superconductors, especially High-Tc supercondoctors.

scholarly journals Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

2008 ◽  
Vol 103 (7) ◽  
pp. 073704 ◽  
Author(s):  
Y. Dong ◽  
R. M. Feenstra ◽  
M. P. Semtsiv ◽  
W. T. Masselink
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Band Offsets

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex Band Structure

2000 ◽  
Vol 15 (6) ◽  
pp. 1257-1260 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1−xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it was difficult to determine the conduction band edge at the interface of the Si1−xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

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