scholarly journals Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

2008 ◽  
Vol 103 (7) ◽  
pp. 073704 ◽  
Author(s):  
Y. Dong ◽  
R. M. Feenstra ◽  
M. P. Semtsiv ◽  
W. T. Masselink
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Band Offsets

Determination of Band Offsets in Heterostructured Colloidal Nanorods Using Scanning Tunneling Spectroscopy

Nano Letters ◽  
2008 ◽  
Vol 8 (9) ◽  
pp. 2954-2958 ◽  
Author(s):  
Dov Steiner ◽  
Dirk Dorfs ◽  
Uri Banin ◽  
Fabio Della Sala ◽  
Liberato Manna ◽  
...  
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Band Offsets

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

scholarly journals Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

2011 ◽  
Vol 99 (21) ◽  
pp. 212101 ◽  
Author(s):  
Y. P. Chiu ◽  
B. C. Huang ◽  
M. C. Shih ◽  
J. Y. Shen ◽  
P. Chang ◽  
...  
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Band Offsets

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex Band Structure

2000 ◽  
Vol 15 (6) ◽  
pp. 1257-1260 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1−xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it was difficult to determine the conduction band edge at the interface of the Si1−xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

Scanning-tunneling spectroscopy on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  
Keyword(s):  
Polymer Films ◽  
Conjugated Polymer ◽  
Three Dimensional ◽  
Field Enhancement ◽  
Direct Consequence ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Band Alignment ◽  
Scanning Tunneling ◽  
Order Of Magnitude

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.

Scanning Tunneling Spectroscopy

2009 ◽  
Vol 2 (1) ◽  
pp. 37-55 ◽  
Author(s):  
Harold J.W. Zandvliet ◽  
Arie van Houselt
Keyword(s):  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling
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