Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

1997 ◽  
Vol 82 (11) ◽  
pp. 5339-5347 ◽  
Author(s):  
Hisayoshi Itoh ◽  
Takeshi Ohshima ◽  
Yasushi Aoki ◽  
Koji Abe ◽  
Masahito Yoshikawa ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Subsequent Annealing ◽  
Cubic Silicon Carbide

Synthesis and Characterization of Cubic Silicon Carbide (β-SiC) and Trigonal Silicon Nitride (α-Si3N4) Nanowires

2014 ◽  
pp. 315-322
Author(s):  
Karine Saulig-Wenger ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
Samuel Bernard ◽  
Fernand Chassagneux ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Synthesis And Characterization ◽  
Cubic Silicon Carbide ◽  
Si3n4 Nanowires

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

2010 ◽  
Vol 645-648 ◽  
pp. 379-382
Author(s):  
Bralee Chayasombat ◽  
Y. Kimata ◽  
T. Kato ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Microstructural Characterization ◽  
Transmission Electron ◽  
Before And After ◽  
Bulge Region ◽  
Cubic Silicon Carbide

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

2012 ◽  
Vol 717-720 ◽  
pp. 517-520 ◽  
Author(s):  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Andrea Severino ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Stress Field ◽  
Silicon Substrate ◽  
Stress Fields ◽  
Stress Model ◽  
Heteroepitaxial Growth ◽  
Device Applications ◽  
Cubic Silicon Carbide

Using several characterization techniques (μ-Raman, mechanical profilometer and microstructure deflections) together with a recent stress model[ ] we study the heteroepitaxial growth of cubic silicon carbide on silicon (100). We show that the observed inconsistency between experimental results might be the result of defects generated on the silicon substrate during the carbonization process. In such a situation wafer curvature techniques do not allow the determination of the stress field in the grown films neither quantitatively nor qualitatively.

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

First-principles characterization of an AlSiVC center in cubic silicon carbide

2011 ◽  
Vol 110 (3) ◽  
pp. 033711 ◽  
Author(s):  
Xiaopeng Wang ◽  
Mingwen Zhao ◽  
Huihao Xia ◽  
Shishen Yan ◽  
Xiangdong Liu
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Cubic Silicon Carbide
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