First-principles characterization of an AlSiVC center in cubic silicon carbide

2011 ◽  
Vol 110 (3) ◽  
pp. 033711 ◽  
Author(s):  
Xiaopeng Wang ◽  
Mingwen Zhao ◽  
Huihao Xia ◽  
Shishen Yan ◽  
Xiangdong Liu
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Cubic Silicon Carbide

Synthesis and Characterization of Cubic Silicon Carbide (β-SiC) and Trigonal Silicon Nitride (α-Si3N4) Nanowires

2014 ◽  
pp. 315-322
Author(s):  
Karine Saulig-Wenger ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
Samuel Bernard ◽  
Fernand Chassagneux ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Synthesis And Characterization ◽  
Cubic Silicon Carbide ◽  
Si3n4 Nanowires

scholarly journals Reveal the fast and charge-insensitive lattice diffusion of silver in cubic silicon carbide via first-principles calculations

2019 ◽  
Vol 170 ◽  
pp. 109190 ◽  
Author(s):  
Qing Peng ◽  
Nanjun Chen ◽  
Zhijie Jiao ◽  
Isabella J. van Rooyen ◽  
William F. Skerjanc ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Lattice Diffusion ◽  
First Principles Calculations ◽  
Cubic Silicon Carbide

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

1997 ◽  
Vol 82 (11) ◽  
pp. 5339-5347 ◽  
Author(s):  
Hisayoshi Itoh ◽  
Takeshi Ohshima ◽  
Yasushi Aoki ◽  
Koji Abe ◽  
Masahito Yoshikawa ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Subsequent Annealing ◽  
Cubic Silicon Carbide

The influence of palladium impurities on vacancy diffusion in cubic silicon carbide

2010 ◽  
Vol 1264 ◽  
Author(s):  
Guido Roma
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Kinetic Properties ◽  
Vacancy Diffusion ◽  
First Principles Calculations ◽  
Low Concentrations ◽  
Diffusion Mechanisms ◽  
Cubic Silicon Carbide ◽  
As Solubility ◽  
Correlation Factors

AbstractThe basic properties of palladium impurities in silicon carbide, such as solubility or diffusion mechanisms, are far from being well understood. In a recent paper I presented a systematic study of stability and kinetic properties of Pd in cubic silicon carbide using first principles calculations. In this paper I focus on the effect of the presence of palladium in silicon carbide, even in very low concentrations, on the kinetic properties of carbon vacancies. I apply a odel of Pd diffusion through a vacancy mechanism on the carbon sublattice and extract the correlation factors leading to an enhancement of vacancy migration, due to the coupling of iffusion fluxes between vacancies and palladium impurities.

Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide

2005 ◽  
Vol 108-109 ◽  
pp. 671-676
Author(s):  
Guillaume Lucas ◽  
Laurent Pizzagalli
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
First Principles ◽  
Transition State Theory ◽  
State Theory ◽  
The Stability ◽  
Dynamics Simulations ◽  
Cubic Silicon Carbide ◽  
Threshold Displacement ◽  
Good Agreement

Using first principles molecular dynamics simulations, we have recently determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary to previous studies using classical molecular dynamics, we found values close to the experimental consensus, and also created defects in good agreement with recent works on interstitials stability in silicon carbide. We have also investigated the stability of several Frenkel pairs, using transition state theory and constrained path calculations.

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

2010 ◽  
Vol 645-648 ◽  
pp. 379-382
Author(s):  
Bralee Chayasombat ◽  
Y. Kimata ◽  
T. Kato ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Microstructural Characterization ◽  
Transmission Electron ◽  
Before And After ◽  
Bulge Region ◽  
Cubic Silicon Carbide

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

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