Laterally oxidized GaInP/AlGaInP quantum well visible laser diodes

1997 ◽  
Vol 82 (5) ◽  
pp. 2710-2712 ◽  
Author(s):  
P. D. Floyd ◽  
D. Sun ◽  
D. W. Treat
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Visible Laser

Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)nsuperlattice quantum well

1986 ◽  
Vol 49 (11) ◽  
pp. 636-638 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Visible Laser ◽  
Current Threshold

Strained quantum well AlGaInP visible laser diodes

2002 ◽  
Author(s):  
S. Honda ◽  
M. Shono ◽  
K. Yodoshi ◽  
T. Yamaguchi ◽  
T. Niina
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Visible Laser ◽  
Strained Quantum Well

OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes

1992 ◽  
Vol 124 (1-4) ◽  
pp. 697-702 ◽  
Author(s):  
T. Katsuyama ◽  
I. Yoshida ◽  
J. Hashimoto ◽  
Y. Taniguchi ◽  
H. Hayashi
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Structures ◽  
Visible Laser ◽  
Strained Quantum Well

scholarly journals Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Laser Diodes ◽  
Gas Source ◽  
Visible Laser ◽  
Grade Index ◽  
Lattice Matched

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.

Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes

1992 ◽  
Vol 31 (Part 2, No. 10A) ◽  
pp. L1399-L1400 ◽  
Author(s):  
Minoru Watanabe ◽  
Masaki Okajima ◽  
Kazuhiko Itaya ◽  
Koichi Nitta ◽  
Yukie Nishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Reliable Operation ◽  
Visible Laser ◽  
Multi Quantum Well

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser
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