Use of metal-oxide-semiconductor capacitors in the analysis of low-temperature epitaxial Si films deposited by remote plasma-enhanced chemical vapor deposition

1997 ◽  
Vol 82 (5) ◽  
pp. 2684-2689
Author(s):  
R. Sharma ◽  
J. L. Fretwell ◽  
B. Doris ◽  
S. Banerjee
2005 ◽  
Vol 87 (5) ◽  
pp. 051922 ◽  
Author(s):  
N. Lu ◽  
W. Bai ◽  
A. Ramirez ◽  
C. Mouli ◽  
A. Ritenour ◽  
...  

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