Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy

1997 ◽  
Vol 82 (4) ◽  
pp. 1700-1705 ◽  
Author(s):  
P. L. Souza ◽  
B. Yavich ◽  
M. Pamplona-Pires ◽  
A. B. Henriques ◽  
L. C. D. Gonçalves
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electronic And Optical Properties

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (9) ◽  
pp. 1278-1280 ◽  
Author(s):  
S. Haffouz ◽  
H. Lahrèche ◽  
P. Vennéguès ◽  
P. de Mierry ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Sapphire Surface ◽  
N Treatment
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