Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells

1997 ◽  
Vol 82 (3) ◽  
pp. 1345-1349 ◽  
Author(s):  
Wu Lu ◽  
Geok-Ing Ng ◽  
B. Jogai ◽  
Jin-Hee Lee ◽  
Chul-Soon Park
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Room Temperature Photoluminescence

Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultiple quantum wells

1983 ◽  
Vol 28 (12) ◽  
pp. 7381-7383 ◽  
Author(s):  
P. Dawson ◽  
G. Duggan ◽  
H. I. Ralph ◽  
K. Woodbridge
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Room Temperature Photoluminescence

Optical evaluation of pretreated InGaN quantum well structures

2003 ◽  
Vol 798 ◽  
Author(s):  
T. Böttcher ◽  
F. Bertram ◽  
P. Bergman ◽  
A. Ueta ◽  
J. Christen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Growth Direction ◽  
Wetting Layer ◽  
Quantum Well Structures ◽  
Room Temperature Photoluminescence ◽  
Decay Times ◽  
Wavelength Distribution ◽  
Ingan Quantum Wells

ABSTRACTIn order to optimize the quantum efficiency of InGaN quantum wells, different MOVPE growth sequences are compared using photo- and electroluminescence. In one study, the surface was pretreated with trimethylindium (TMIn) prior to the well deposition. In another study, growth interruptions were performed after the quantum well deposition to desorb segregated indium. In both cases, the room-temperature photoluminescence (PL) intensity is strongly enhanced. For the samples grown with TMIn preflow the wavelength distribution in low-temperature cathodoluminescence (CL) wavelength mappings is narrowed, which can be attributed to more homogeneous quantum wells. Furthermore, the decay times of the radiative recombination increase both at RT and 2K. A reason for this could be an improved indium profile along the growth direction or a more homogeneous In wetting layer due to the pre-wetted surface.

InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm range

2007 ◽  
Vol 301-302 ◽  
pp. 465-468 ◽  
Author(s):  
Sergey V. Ivanov ◽  
Valentin N. Jmerik ◽  
Tatiana V. Shubina ◽  
Svyatoslav B. Listoshin ◽  
Andrey M. Mizerov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Room Temperature Photoluminescence

Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 539-541 ◽  
Author(s):  
Faustino Martelli ◽  
Maria Grazia Proietti ◽  
Maria Gabriella Simeone ◽  
Maria Rita Bruni ◽  
Marco Zugarini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

2009 ◽  
Vol 94 (14) ◽  
pp. 141902 ◽  
Author(s):  
Yanghua Chen ◽  
Cheng Li ◽  
Zhiwen Zhou ◽  
Hongkai Lai ◽  
Songyan Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Silicon Based

Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
S.F. Li ◽  
D.J. As ◽  
K. Lischka ◽  
D.G. Pacheco-Salazar ◽  
L.M.R. Scolfaro ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Excitation Spectra ◽  
Room Temperature Photoluminescence ◽  
Double Heterostructures ◽  
Peak Energy

ABSTRACTCubic InGaN/GaN double heterostructures and multi-quantum-wells have been grown by Molecular Beam Epitaxy on cubic 3C-SiC. We find that the room temperature photoluminescence spectra of our samples has two emission peaks at 2.4 eV and 2.6 e V, respectively. The intensity of the 2.6 eV decreases and that of the 2.4 eV peak increases when the In mol ratio is varied between X = 0.04 and 0.16. However, for all samples the peak energy is far below the bandgap energy measured by photoluminescence excitation spectra, revealing a large Stokes-like shift of the InGaN emission. The temperature variation of the photoluminescence intensity yields an activation energy of 21 meV of the 2.6 eV emission and 67 meV of the 2.4 eV emission, respectively. The room temperature photoluminescence of fully strained multi quantum wells (x = 0.16) is a single line with a peak wavelength at about 510 nm.

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