scholarly journals Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

1997 ◽  
Vol 82 (3) ◽  
pp. 1147-1152 ◽  
Author(s):  
P. Roura ◽  
A. Vilà ◽  
J. Bosch ◽  
M. López ◽  
A. Cornet ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Atomic Diffusion ◽  
Epitaxial Layers

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

On the Role of Surface Diffusion in Stress Relaxation During Electromigration

1995 ◽  
Vol 391 ◽  
Author(s):  
L.M. Klinger ◽  
L. Levin ◽  
E.E. Glickman
Keyword(s):  
Stress Relaxation ◽  
Surface Diffusion ◽  
Hydrostatic Stress ◽  
Stress Gradient ◽  
Film Surface ◽  
Diffusional Creep ◽  
Atomic Diffusion ◽  
Material Transport ◽  
Diffusional Flux

AbstractWe report on the role of surface diffusion involved in relaxation of electromigration (EM) induced compressive stresses in relation to hillock growth and EM behavior of interconnects. Two competing mechanisms of EM stress relaxation by material transport onto the surface are considered. The first is hillocking by threshold diffusional creep (TCH), with rather large blocks of material (grains or group of grains) involved in plastic flow. The second mechanism, atomic diffusion hillocking (ADH), is presumed to be a nonthreshold one, and represents atomic grain boundary (GB) diffusion stimulated by the hydrostatic stress gradient in the direction normal to the film surface. The latter process involves surface diffusion because GB diffusional flux onto the surface must be coupled with the flux of redistribution of the atoms over the surface. If ADH acts rapidly, this should prevent the build-up of the matter at the down-wind (anode) end of the stripe, and thus, eliminate the Blech EM threshold resulting from the stress-gradient along the stripe. The question as to whether GB diffusion capable of transporting atoms pushed by electron wind along the stripe is also effective in relieving compressive stress by GB migration of the surplus atoms in the normal direction, has remained open up to now. The problem is especially acute for short or/and narrow lines separated into short polycrystalline segments, where the Blech threshold effects are critical to EM reliability.We derived the main features of the EM behavior in drift velocity test geometry assuming that both TCH and ADH are operative. The result can be compared with available and future experimental observations in order to reveal if and when the ADH mechanism with surface diffusion involved works.

Critical thickness and stress relaxation in YBaCuO (123) strained epitaxial layers and YBaCuO based strained superlattices

1996 ◽  
Vol 100 (2) ◽  
pp. 185-190 ◽  
Author(s):  
J.P. Contour ◽  
A. Défossez ◽  
D. Ravelosona ◽  
A. Abert ◽  
P. Ziemann
Keyword(s):  
Stress Relaxation ◽  
Critical Thickness ◽  
Epitaxial Layers

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

BDNF Val⁶⁶Met polymorphism to generalized anxiety disorder pathways: Indirect effects via attenuated parasympathetic stress-relaxation reactivity.

2020 ◽  
Vol 129 (3) ◽  
pp. 237-247 ◽  
Author(s):  
Hsin-An Chang ◽  
Wen-Hui Fang ◽  
Yia-Ping Liu ◽  
Nian-Sheng Tzeng ◽  
Jia-Fwu Shyu ◽  
...  
Keyword(s):  
Anxiety Disorder ◽  
Stress Relaxation ◽  
Generalized Anxiety Disorder ◽  
Indirect Effects ◽  
Generalized Anxiety

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

STRESS RELAXATION IN SOLIDS

1987 ◽  
Vol 48 (C8) ◽  
pp. C8-3-C8-13 ◽  
Author(s):  
J. KUBÁT ◽  
M. RIGDAHL
Keyword(s):  
Stress Relaxation
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