Thickness Variation of HfO[sub 2] Films Under Post-Deposition Annealing Investigated By X-ray Reflectivity and X-ray Photoelectron Spectroscopy

2011 ◽  
Author(s):  
Yong-Qing Chang ◽  
Wei-En Fu ◽  
David G. Seiler ◽  
Alain C. Diebold ◽  
Robert McDonald ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Thickness Variation ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1557-1562 ◽  
Author(s):  
Y. Hibino ◽  
S. Ishihara ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Extinction Coefficient ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Post Deposition Annealing ◽  
Sputtering Deposition ◽  
X Ray ◽  
Tauc Plot ◽  
Plot Analysis ◽  
Sputtering Power ◽  
Post Deposition

ABSTRACTWe report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.

OHMIC CONTACTS ON DIAMOND BY R. F. SPUTTERING AND Ti-Au METALLIZATION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 927-931 ◽  
Author(s):  
Y. Y. WANG ◽  
C. M. ZHEN ◽  
Z. J. YAN ◽  
Q. F. GUO ◽  
G. H. CHEN
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Boron Concentration ◽  
Low Oxygen ◽  
Spectroscopy Analysis ◽  
Post Deposition Annealing ◽  
X Ray ◽  
High Boron ◽  
Low Oxygen Concentration ◽  
Post Deposition

Low resistance ohmic contacts were fabricated on diamond films. A high boron concentration (~1020 cm -3) was obtained on the surface by ion implantation. The initial film of Ti (20nm) followed by Au (100nm) was deposited by r. f. sputtering. I-V measurements showed that the as-deposited contacts were ohmic. Upon annealing, the ohmic characteristics of the contacts were improved significantly. The specific contacts resistivity decreased from 6.2 × 10-3 to 1.2 × 10-6Ω cm 2 as a result of post-deposition annealing. The X-ray photoelectron spectroscopy analysis indicated the formation of titanium carbide at the Ti/diamond interface in the as-deposited and annealed states. A low oxygen concentration was observed.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Effect of Post-Deposition Annealing on some Optical Properties of Thermally-Evaporated V2O5 Thin Film

2012 ◽  
Vol 329 ◽  
pp. 139-145
Author(s):  
S.A. Aly
Keyword(s):  
Optical Properties ◽  
Amorphous State ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Spectral Behaviour ◽  
Before And After ◽  
Different Temperatures ◽  
Reflectance Measurements ◽  
Post Deposition

A Vanadium Pentoxide Sample with a Film Thickness of 75 Nm Has Been Thermally Evaporated on Unheated Glass Substrate Using V2O5High Purity Powder. the Sample Was Subjected to a Subsequent Post-Deposition Annealing in Air at Different Temperatures for a Period of One Hour. the Optical Properties Were Studied by Transmittance and Reflectance Measurements. the Integrated Visible ,TVis, and Solar, TSol, Transmittance Were Calculated. the Spectral Behaviour of the Refractive Index as Well as the Absorption Coefficient before and after Post-Deposition Heat-Treatment Was Also Reported. X-Ray Diffraction Confirmed that the Film in the as-Deposited as Well as after Annealing up to 400 °C Is in the Amorphous State.

scholarly journals Properties of Thin Film-Covered GaN(0001) Surfaces

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapour Deposition ◽  
Metal Films ◽  
Physical Vapour Deposition ◽  
Surface Alloying ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

scholarly journals Effects of Temperature on the Structural and Optical Preperties of AgGaSe2 Thin Films

1970 ◽  
Vol 33 (2) ◽  
pp. 179-188
Author(s):  
MRA Bhuiyan ◽  
DK Saha ◽  
SM Firoz Hasan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Visible Region ◽  
Wavelength Region ◽  
Band Gap Energy ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Glass Substrates ◽  
Academy Of Sciences ◽  
Post Deposition

In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stacked elemental layer (SEL) deposition technique in vacuum. The films were prepared at the post-deposition annealing temperature from 100 to 350°C for 15 min duration. The atomic composition of the films was measured by energy dispersive analysis of X-ray (EDAX) method. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) has been employed to study the structure of the films. The structures of the films are found to be polycrystalline in nature. The lattice parameters, grain size, strain and dislocation densities of the films were calculated. Optical characteristics of the films were ascertained by spectrophotometer in the photon wavelength ranging between 300 and 2500 nm. The transmittance was found to increase with the increase of annealing temperature. The transmittance falls steeply with decreasing wavelength. It revealed that AGS films have considerable absorption throughout the wavelength region from 400 to 800 nm. The optical band gap energy has been evaluated. Two possible direct allowed and direct forbidden transitions have been observed for all the AGS films in visible region. The former varied from 1.67 to 1.75 eV and the later from 2.05 to 2.08 eV, depending on the post-deposition annealing temperature of the films. DOI: 10.3329/jbas.v33i2.4101 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 2, 179-188, 2009

X-ray Photoelectron Spectroscopy Study on E-beam Co-evaporated YBCO Precursors and their Post –deposition Conversion

2005 ◽  
Vol 868 ◽  
Author(s):  
Yifei Zhang ◽  
Ron Feenstra ◽  
David K. Christen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Cost Effective ◽  
Phase Evolution ◽  
Coated Conductors ◽  
Ex Situ ◽  
Copper Oxidation ◽  
Xps Spectra ◽  
X Ray ◽  
Chemical States ◽  
Post Deposition

AbstractElectron beam co-evaporation is one of the ex situ techniques being developed for cost-effective fabrication of YBa2Cu3O7-δ (YBCO) coated conductors. To achieve high critical current (Ic) and fast conversion, further understanding is needed of the chemical and microstructural characteristics of the precursors and the phase evolution process towards the epitaxial c-axis oriented YBCO film during the post-deposition conversion annealing. In this study, X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical and compositional profiles of the precursors. Samples quenched from the processing stage were also inspected for identifying the transient elemental chemical states during the YBCO phase formation. XPS survey and detailed spectra were recorded for the surfaces and through various depths. It is suggested that XPS spectra, especially the “Auger parameters” can be used for revealing the conversion reaction. Preliminary results indicate that the copper oxidation state might have important effect on precursor conversion behaviors.

A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

1999 ◽  
Vol 565 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ji-Yi Yang ◽  
Yu-Hsun Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Thickness Variation ◽  
Gap Filling ◽  
Treatment Technology ◽  
Cross Sectional ◽  
X Ray ◽  
Significant Damage ◽  
Ion Treatment ◽  
Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

2009 ◽  
Vol 1155 ◽  
Author(s):  
Rahul Suri ◽  
Daniel J Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
X Ray ◽  
Layer Deposition ◽  
Post Deposition ◽  
Gallium Oxides

AbstractThe interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.

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