Dynamics of collisionless rf plasma sheaths

1997 ◽  
Vol 82 (8) ◽  
pp. 3689-3709 ◽  
Author(s):  
Paul A. Miller ◽  
Merle E. Riley
Keyword(s):  
2006 ◽  
Vol 1 (2) ◽  
pp. 178-185 ◽  
Author(s):  
Zhong-ling Dai ◽  
You-nian Wang

1993 ◽  
Vol 71 (6) ◽  
pp. 863-866 ◽  
Author(s):  
Paul A. Miller ◽  
Louis A. Romero ◽  
Paul D. Pochan
Keyword(s):  

1992 ◽  
Vol 45 (8) ◽  
pp. 5913-5928 ◽  
Author(s):  
Rida T. Farouki ◽  
Satoshi Hamaguchi ◽  
Manoj Dalvie

1986 ◽  
Vol 60 (9) ◽  
pp. 3081-3087 ◽  
Author(s):  
A. Metze ◽  
D. W. Ernie ◽  
H. J. Oskam

1994 ◽  
Author(s):  
Mark A. Sobolewski ◽  
James K. Olthoff
Keyword(s):  

Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).


1997 ◽  
Vol 07 (C4) ◽  
pp. C4-155-C4-165 ◽  
Author(s):  
B. M. Annaratone
Keyword(s):  

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