X-ray photoemission spectroscopy studies of conducting polymer-substrate interfaces: Interfacial electrochemical diffusion

1997 ◽  
Vol 81 (11) ◽  
pp. 7313-7316 ◽  
Author(s):  
Hitoshi Kato ◽  
Susumu Takemura ◽  
Yasushi Nakajima
1998 ◽  
Vol 5 (3) ◽  
pp. 536-538 ◽  
Author(s):  
Takeshi Nakatani ◽  
Yuji Saitoh ◽  
Yuden Teraoka ◽  
Tetsuo Okane ◽  
Akinari Yokoya

An undulator beamline for spectroscopy studies focusing on the electronic structure of actinide materials is under construction. Linearly or circularly polarized soft X-rays are provided by employing a variably polarizing undulator. Varied-line-spacing plane gratings and a sagittal-focusing system are used to monochromatize the undulator beam, whose energy ranges from 0.3 to 1.5 keV. A resolving power of 104 is expected in the whole energy region. These components are methodically operated by the SPring-8 beamline control system. There are three experimental stations in the beamline. In one of the stations the photoemission spectroscopy experiments are carried out at a radioisotope-controlled area where actinide compounds as well as unsealed radioactive materials are usable. Other experimental stations are planned in the beamline for surface photochemical reactions and biological applications.


Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1060
Author(s):  
K. Kodama ◽  
M. Ozeki ◽  
K. Mochizuki ◽  
Y. Sakuma ◽  
N. Ohtsuka

Author(s):  
Lucia Pérez Ramírez ◽  
Anthony Boucly ◽  
Florent Saudrais ◽  
F. Bournel ◽  
Jean-Jacques Gallet ◽  
...  

To advance an understanding of key electrochemical and photocatalytic processes that depend on the electronic structure of aqueous solutions, X-ray photoemission spectroscopy has become an invaluable tool, especially when practiced...


1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.


2015 ◽  
Vol 77 ◽  
pp. 34-41 ◽  
Author(s):  
Irene Martini ◽  
Eric Chevallay ◽  
Valentin Fedosseev ◽  
Christoph Hessler ◽  
Holger Neupert ◽  
...  

1997 ◽  
Vol 9 (22) ◽  
pp. 4769-4780 ◽  
Author(s):  
N Subramanian ◽  
R Kesavamoorthy ◽  
K Govinda Rajan ◽  
Mohammad Yousuf ◽  
Santanu Bera ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document