Atomic lattice structure and continuum plate theories for the vibrational characteristics of graphenes

2011 ◽  
Vol 110 (8) ◽  
pp. 084308 ◽  
Author(s):  
S. Arghavan ◽  
A. V. Singh
Keyword(s):  
Lattice Structure ◽  
Atomic Lattice ◽  
Vibrational Characteristics

Evidence of Atomic Dislocation Loops Crystal Lattice Flaws Causing EOS/ESD Damage in 〈100〉 Silicon

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1420007
Author(s):  
Fayik Bundhoo
Keyword(s):  
Crystal Lattice ◽  
Integrated Circuit ◽  
Lattice Point ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Crystalline Lattice ◽  
Normal Operation ◽  
Dislocation Loops ◽  
Atomic Lattice ◽  
Electrical Failure

Crystalline lattice point defects in integrated circuit can lay hidden below the silicon surface exist in the atomic lattice point structure or as interstitials. Initially they may not necessary represent an electrical failure but can act as seeds for electrical degradation in a time period. This paper study one category of Silicon defect “Dislocation loops” that initially were dormant then propagated under the silicon surface in the crystal lattice structure causing catastrophic EOS damage. This is particularly true if the crystalline defect exists near or at the boundary of PN junctions. This paper present evidence of dormant crystalline lattice defects in the form of crystalline dislocation loops degrading to EOS. Over a period of time under normal operation life of the part these dislocation loops can trigger EOS/ESD events.

Structural and elastic properties of Cu6Sn5 and Cu3Snfrom first-principles calculations

2009 ◽  
Vol 24 (7) ◽  
pp. 2361-2372 ◽  
Author(s):  
Jiunn Chen ◽  
Yi-Shao Lai ◽  
Ping-Feng Yang ◽  
Chung-Yuan Ren ◽  
Di-Jing Huang
Keyword(s):  
Electronic Structure ◽  
Elastic Modulus ◽  
Elastic Properties ◽  
First Principles ◽  
Elastic Anisotropy ◽  
Lattice Structure ◽  
Elastic Stiffness ◽  
First Principles Calculations ◽  
Atomic Lattice ◽  
Microstructure Effect

We investigated the elastic properties of two tin-copper crystalline phases, the η′-Cu6Sn5 and ε-Cu3Sn, which are often encountered in microelectronic packaging applications. The full elastic stiffness of both phases is determined based on strain-energy relations using first-principles calculations. The computed results show the elastic anisotropy of both phases that cannot be resolved from experiments. Our results, suggesting both phases have the greatest stiffness along the c direction, particularly showed the unique in-plane elastic anisotropy associated with the lattice modulation of the Cu3Sn superstructure. The polycrystalline moduli obtained using the Voigt-Reuss scheme are 125.98 GPa for Cu6Sn5 and 134.16 GPa for Cu3Sn. Our data analysis indicates that the smaller elastic moduli of Cu6Sn5 are attributed to the direct Sn–Sn bond in Cu6Sn5. We reassert the elastic modulus and hardness of both phases using the nanoindentation experiment for our calculation benchmark. Interestingly, the computed polycrystalline elastic modulus of Cu6Sn5 seems to be overestimated, whereas that of Cu3Sn falls nicely in the range of reported data. Based on the observations, the elastic modulus of Cu6Sn5 obtained from nanoindentation tests admit the microstructure effect that is absent for Cu3Sn is concluded. Our analysis of electronic structure shows that the intrinsic hardness and elastic modulus of both phases are dominated by electronic structure and atomic lattice structure, respectively.

scholarly journals Spin mapping of intralayer antiferromagnetism and field-induced spin reorientation in monolayer CrTe2

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Jing-Jing Xian ◽  
Cong Wang ◽  
Jin-Hua Nie ◽  
Rui Li ◽  
Mengjiao Han ◽  
...  
Keyword(s):  
Lattice Structure ◽  
Spin Reorientation ◽  
Atomic Scale ◽  
First Principles Calculations ◽  
Atomic Lattice ◽  
Depth Analysis ◽  
Scanning Tunnelling ◽  
Magnetic Orders ◽  
Tunnelling Microscopy ◽  
Spin Texture

AbstractIntrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches our understanding of two-dimensional (2D) magnetic orders and presents several advantages over ferromagnetism in spintronic applications. However, studies of 2D intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. Here, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular-beam epitaxy. We observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is ferromagnetic, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin reorientation under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth analysis.

scholarly journals Direct observation of van der Waals stacking–dependent interlayer magnetism

Science ◽  
2019 ◽  
Vol 366 (6468) ◽  
pp. 983-987 ◽  
Author(s):  
Weijong Chen ◽  
Zeyuan Sun ◽  
Zhongjie Wang ◽  
Lehua Gu ◽  
Xiaodong Xu ◽  
...  
Keyword(s):  
Lattice Structure ◽  
Twist Angle ◽  
Van Der Waals ◽  
Magnetic Semiconductor ◽  
Interlayer Coupling ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Atomic Lattice ◽  
Stacking Order ◽  
The Individual

Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. In van der Waals materials, this control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we observed stacking-dependent interlayer magnetism in the two-dimensional (2D) magnetic semiconductor chromium tribromide (CrBr3), which was enabled by the successful growth of its monolayer and bilayer through molecular beam epitaxy. Using in situ spin-polarized scanning tunneling microscopy and spectroscopy, we directly correlate the atomic lattice structure with the observed magnetic order. Although the individual monolayer CrBr3 is ferromagnetic, the interlayer coupling in bilayer depends on the stacking order and can be either ferromagnetic or antiferromagnetic. Our observations pave the way for manipulating 2D magnetism with layer twist angle control.

Structural analysis of the photosynthetic membrane from Ectothiorhodospira halochloris

1983 ◽  
Vol 41 ◽  
pp. 740-741
Author(s):  
H. Engelhardt ◽  
R. Guckenberger ◽  
W. Baumeister
Keyword(s):  
Lattice Structure ◽  
Bacterial Species ◽  
Hexagonal Lattice ◽  
Reaction Centre ◽  
Photosynthetic Membrane ◽  
Rhodopseudomonas Viridis ◽  
Photosynthetic Membranes ◽  
Ectothiorhodospira Halochloris ◽  
Main Components

Bacterial photosynthetic membranes contain, apart from lipids and electron transport components, reaction centre (RC) and light harvesting (LH) polypeptides as the main components. The RC-LH complexes in Rhodopseudomonas viridis membranes are known since quite seme time to form a hexagonal lattice structure in vivo; hence this membrane attracted the particular attention of electron microscopists. Contrary to previous claims in the literature we found, however, that 2-D periodically organized photosynthetic membranes are not a unique feature of Rhodopseudomonas viridis. At least five bacterial species, all bacteriophyll b - containing, possess membranes with the RC-LH complexes regularly arrayed. All these membranes appear to have a similar lattice structure and fine-morphology. The lattice spacings of the Ectothiorhodospira haloohloris, Ectothiorhodospira abdelmalekii and Rhodopseudomonas viridis membranes are close to 13 nm, those of Thiocapsa pfennigii and Rhodopseudomonas sulfoviridis are slightly smaller (∼12.5 nm).

Electron-Channelling Patterns: Principles and Techniques

1976 ◽  
Vol 34 ◽  
pp. 400-401
Author(s):  
David C. Joy
Keyword(s):  
Crystal Structure ◽  
Electron Flux ◽  
Lattice Structure ◽  
Incident Beam ◽  
Bloch Wave ◽  
Crystalline Solid ◽  
Angle Of Incidence ◽  
Electron Channelling ◽  
Regular Arrangement ◽  
Backscattered Signals

In a crystalline solid the regular arrangement of the lattice structure influences the interaction of the incident beam with the specimen, leading to changes in both the transmitted and backscattered signals when the angle of incidence of the beam to the specimen is changed. For the simplest case the electron flux inside the specimen can be visualized as the sum of two, standing wave distributions of electrons (Fig. 1). Bloch wave 1 is concentrated mainly between the atom rows and so only interacts weakly with them. It is therefore transmitted well and backscattered weakly. Bloch wave 2 is concentrated on the line of atom centers and is therefore transmitted poorly and backscattered strongly. The ratio of the excitation of wave 1 to wave 2 varies with the angle between the incident beam and the crystal structure.

Microstructural Study of Diamond Deformed Under High Pressure and Temperature

1985 ◽  
Vol 43 ◽  
pp. 230-231
Author(s):  
E. F. Koch
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Lattice Structure ◽  
Diamond Particle ◽  
Polycrystalline Diamond ◽  
Sintering Process ◽  
Ion Milling ◽  
Sintered Compact ◽  
Transmission Electron ◽  
High Pressure Sintering

Because of the extremely rigid lattice structure of diamond, generating new dislocations or moving existing dislocations in diamond by applying mechanical stress at ambient temperature is very difficult. Analysis of portions of diamonds deformed under bending stress at elevated temperature has shown that diamond deforms plastically under suitable conditions and that its primary slip systems are on the ﹛111﹜ planes. Plastic deformation in diamond is more commonly observed during the high temperature - high pressure sintering process used to make diamond compacts. The pressure and temperature conditions in the sintering presses are sufficiently high that many diamond grains in the sintered compact show deformed microtructures.In this report commercially available polycrystalline diamond discs for rock cutting applications were analyzed to study the deformation substructures in the diamond grains using transmission electron microscopy. An individual diamond particle can be plastically deformed in a high pressure apparatus at high temperature, but it is nearly impossible to prepare such a particle for TEM observation, since any medium in which the diamond is mounted wears away faster than the diamond during ion milling and the diamond is lost.

Structure of stacking faults in pyrite using TEM techniques

1992 ◽  
Vol 50 (1) ◽  
pp. 358-359
Author(s):  
Raja Subramanian ◽  
Kenneth S. Vecchio
Keyword(s):  
Lattice Structure ◽  
Stacking Faults ◽  
Covalent Bond ◽  
Group Symmetry ◽  
Iron Pyrite ◽  
Dislocation Glide ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Chlorine Ions

The structure of stacking faults and partial dislocations in iron pyrite (FeS2) have been studied using transmission electron microscopy. Pyrite has the NaCl structure in which the sodium ions are replaced by iron and chlorine ions by covalently-bonded pairs of sulfur ions. These sulfur pairs are oriented along the <111> direction. This covalent bond between sulfur atoms is the strongest bond in pyrite with Pa3 space group symmetry. These sulfur pairs are believed to move as a whole during dislocation glide. The lattice structure across these stacking faults is of interest as the presence of these stacking faults has been preliminarily linked to a higher sulfur reactivity in pyrite. Conventional TEM contrast analysis and high resolution lattice imaging of the faulted area in the TEM specimen has been carried out.

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