Reduced threshold current density due to excitonic optical gain in the presence of dislocations and surface states in tensile strained ZnCdSe quantum wire lasers

1997 ◽  
Vol 81 (10) ◽  
pp. 6781-6785 ◽  
Author(s):  
W. Huang ◽  
F. Jain
Keyword(s):  
Current Density ◽  
Quantum Wire ◽  
Surface States ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density

Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Marek Osiński
Keyword(s):  
Gallium Nitride ◽  
Theoretical Calculation ◽  
Current Density ◽  
Radiative Recombination ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Minimum Threshold ◽  
Effective Masses ◽  
Emitting Lasers

AbstractThreshold current density in GaN-based UV double-heterostructure lasers is predicted in the range of 2- 4 kA/cm2 using theoretical calculation of optimized heterostructure for various types of devices. Freecarrier (FC) and Coulomb-enhancement (CE) models are compared. Results are given for different combinations of effective masses. The minimum threshold current is not strongly influenced by the choice of effective masses. The FC model predicts lower than CE threshold in edge-emitting lasers, whereas the CE model predicts lower than EC threshold in thin VCSEL devices.

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes

2007 ◽  
Vol 46 (No. 2) ◽  
pp. L34-L36 ◽  
Author(s):  
Yoshifumi Nishimoto ◽  
Koji Miura ◽  
Hideki Yagi ◽  
Dhanorm Plumwongrot ◽  
Kazuya Ohira ◽  
...  
Keyword(s):  
Current Density ◽  
Quantum Wire ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers ◽  
Low Threshold ◽  
Damage Processes

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

2015 ◽  
Vol 1 (1) ◽  
Author(s):  
H. Tanaka ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
K. Akahane
Keyword(s):  
Spontaneous Emission ◽  
Current Density ◽  
Optical Gain ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Annealing Process ◽  
Optical Confinement ◽  
Light Waveguide ◽  
Soi Technology

Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm

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