Directional elliptically polarized terahertz emission from air plasma produced by circularly polarized intense femtosecond laser pulses

2011 ◽  
Vol 99 (16) ◽  
pp. 161505 ◽  
Author(s):  
Fazel Jahangiri ◽  
Masaki Hashida ◽  
Shigeki Tokita ◽  
Takeshi Nagashima ◽  
Masanori Hangyo ◽  
...  
2012 ◽  
Vol 5 (2) ◽  
pp. 026201 ◽  
Author(s):  
Fazel Jahangiri ◽  
Masaki Hashida ◽  
Shigeki Tokita ◽  
Takeshi Nagashima ◽  
Kazuto Ohtani ◽  
...  

2017 ◽  
Vol 50 (5) ◽  
pp. 055101 ◽  
Author(s):  
A Arlauskas ◽  
L Subačius ◽  
A Krotkus ◽  
V L Malevich

2021 ◽  
Vol 104 (5) ◽  
Author(s):  
Jing Li ◽  
Wenjiang Tan ◽  
Jinhai Si ◽  
Shiyun Tang ◽  
Yang Yang ◽  
...  

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Ignas Nevinskas ◽  
Sandra Stanionytė ◽  
Vaidas Pačebutas ◽  
Arūnas Krotkus

Lattice-matched GaInAs p-i-n diodes of different i-region thicknesses have been MBE grown on n-type InP (100) and (111) crystallographic orientation substrates. It has been found that terahertz emission from such structures when illuminated with femtosecond laser pulses can be more efficient than that from the known to date best surface terahertz emitter (111) p-InAs. The explanation of the terahertz generation mechanism from p-i-n diodes is based on ultrafast photocurrent effects. Anisotropic transient photocurrents causing the 3ϕ azimuthal angle dependence are observed in the sample on (111) substrate. These p-i-n structures allow covering a technologically important 1.55 μm range and may provide controllability and compactness of a THzTDS system when biased with an external voltage source.


2007 ◽  
Vol 2 (1) ◽  
pp. 108-114 ◽  
Author(s):  
A. Krotkus ◽  
R. Adomavičius ◽  
G. Molis ◽  
V. L. Malevich

2011 ◽  
Vol 102 (3) ◽  
pp. 551-554 ◽  
Author(s):  
F. Garwe ◽  
A. Schmidt ◽  
G. Zieger ◽  
T. May ◽  
K. Wynne ◽  
...  

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