Terahertz emission and energy reservoir of air-plasma filamentation induced by two-color femtosecond laser pulses

2013 ◽  
Vol 297 ◽  
pp. 118-120 ◽  
Author(s):  
Nan Yang ◽  
Haiwei Du
2012 ◽  
Vol 5 (2) ◽  
pp. 026201 ◽  
Author(s):  
Fazel Jahangiri ◽  
Masaki Hashida ◽  
Shigeki Tokita ◽  
Takeshi Nagashima ◽  
Kazuto Ohtani ◽  
...  

2011 ◽  
Vol 99 (16) ◽  
pp. 161505 ◽  
Author(s):  
Fazel Jahangiri ◽  
Masaki Hashida ◽  
Shigeki Tokita ◽  
Takeshi Nagashima ◽  
Masanori Hangyo ◽  
...  

2017 ◽  
Vol 50 (5) ◽  
pp. 055101 ◽  
Author(s):  
A Arlauskas ◽  
L Subačius ◽  
A Krotkus ◽  
V L Malevich

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Ignas Nevinskas ◽  
Sandra Stanionytė ◽  
Vaidas Pačebutas ◽  
Arūnas Krotkus

Lattice-matched GaInAs p-i-n diodes of different i-region thicknesses have been MBE grown on n-type InP (100) and (111) crystallographic orientation substrates. It has been found that terahertz emission from such structures when illuminated with femtosecond laser pulses can be more efficient than that from the known to date best surface terahertz emitter (111) p-InAs. The explanation of the terahertz generation mechanism from p-i-n diodes is based on ultrafast photocurrent effects. Anisotropic transient photocurrents causing the 3ϕ azimuthal angle dependence are observed in the sample on (111) substrate. These p-i-n structures allow covering a technologically important 1.55 μm range and may provide controllability and compactness of a THzTDS system when biased with an external voltage source.


2007 ◽  
Vol 2 (1) ◽  
pp. 108-114 ◽  
Author(s):  
A. Krotkus ◽  
R. Adomavičius ◽  
G. Molis ◽  
V. L. Malevich

2011 ◽  
Vol 102 (3) ◽  
pp. 551-554 ◽  
Author(s):  
F. Garwe ◽  
A. Schmidt ◽  
G. Zieger ◽  
T. May ◽  
K. Wynne ◽  
...  

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