Metastable effects in the DC conductivity of hydrogenated amorphous silicon

1987 ◽  
Author(s):  
H. M. Branz ◽  
E. H. Lyons ◽  
K. Capuder ◽  
J. S. Haggerty ◽  
D. Adler
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dc Conductivity ◽  
Metastable Effects ◽  
Hydrogenated Amorphous

Capacitance Studies of Metastable Defect Creation in Hydrogenated Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
J. D. Cohen ◽  
K. Mahavadi ◽  
K. Zellama ◽  
J. P. Harbison ◽  
A. E. Delahoy
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Microscopic Models ◽  
Deep State ◽  
Absorption Studies ◽  
Defect Creation ◽  
Metastable Effects ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTWe have studied the light induced instability problem in hydrogenated amorphous silicon using junction capacitance techniques. These techniques are used to examine specific changes in the density of gap states, and occupation of gap states, for undoped a-Si:H samples after light saturation and for a series of partial anneal “states” which culminate in the original dark annealed state (state A). We find that the observed changes in the metastable occupied and unoccupied defects contradict the Si-Si bond breaking model and indicate at least two defect creation processes. In several samples we also find clear evidence that the metastable defect distribution near midgap has a slightly different energy distribution than the stable deep state (dangling bond) distribution. At the same time, these results seem to be qualitatively consistent with many aspects of recent ESR and optical absorption studies of metastable defect creation. We discuss these findings in terms of alternative possible microscopic models for metastable effects in a-Si:H.

Photo-Induced Metastable Effects in Hydrogenated Amorphous Silicon (a-Si:H)

1985 ◽  
Vol 497 (2) ◽  
pp. 187-197 ◽  
Author(s):  
W. Fuhs ◽  
H. Mell ◽  
J. Stuke ◽  
P. Thomas ◽  
G. Weiser
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Metastable Effects ◽  
Hydrogenated Amorphous

Metastable effects in hydrogenated amorphous silicon–silicon nitride multilayers

1990 ◽  
Vol 42 (18) ◽  
pp. 11862-11868 ◽  
Author(s):  
Yoon-Ho Song ◽  
Chong-Chan Eun ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Metastable Effects ◽  
Hydrogenated Amorphous ◽  
Silicon Silicon

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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