scholarly journals Size-dependent model for thin film and nanowire thermal conductivity

2011 ◽  
Vol 99 (13) ◽  
pp. 131904 ◽  
Author(s):  
Alan J. H. McGaughey ◽  
Eric S. Landry ◽  
Daniel P. Sellan ◽  
Cristina H. Amon
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Size Dependent ◽  
Dependent Model

Size-Dependent Model for Thin Film Thermal Conductivity

2011 ◽  
Author(s):  
Alan J. H. McGaughey ◽  
Daniel P. Sellan ◽  
Eric S. Landry ◽  
Cristina H. Amon
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Classical Model ◽  
Relaxation Times ◽  
Silicon Thin Film ◽  
Size Dependent ◽  
Model Predictions ◽  
Dependent Model ◽  
Better Than ◽  
Phonon Properties

We present a closed-form classical model for the size dependence of thin film thermal conductivity. The model predictions are compared to Stillinger-Weber silicon thin film thermal conductivities (in-plane and cross-plane directions) calculated using phonon properties obtained from lattice dynamics calculations. By including the frequency dependence of the phonon-phonon relaxation times, the model is able to capture the approach to the bulk thermal conductivity better than models based on a single relaxation time.

A size-dependent model for shear deformable laminated micro-nano plates based on couple stress theory

2021 ◽  
Vol 259 ◽  
pp. 113457
Author(s):  
Zanhang He ◽  
Jianghong Xue ◽  
Sishi Yao ◽  
Yongfu Wu ◽  
Fei Xia
Keyword(s):  
Couple Stress ◽  
Couple Stress Theory ◽  
Stress Theory ◽  
Size Dependent ◽  
Dependent Model ◽  
Shear Deformable

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Onset of size effects in lattice thermal conductivity and lifetime of low-frequency thermal phonons

2012 ◽  
Vol 1404 ◽  
Author(s):  
A.A. Maznev
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Size Effects ◽  
Lattice Thermal Conductivity ◽  
Low Frequency ◽  
Square Root ◽  
Relaxation Rates ◽  
Frequency Limit ◽  
Conductivity Of Thin Films ◽  
Closed Form Formula

ABSTRACTThe onset of size effects in phonon-mediated thermal transport along a thin film at temperatures comparable or greater than the Debye temperature is analyzed theoretically. Assuming a quadratic frequency dependence of phonon relaxation rates in the low-frequency limit, a simple closed-form formula for the reduction of the in-plane thermal conductivity of thin films is derived. The effect scales as the square root of the film thickness, which leads to the prediction of measurable size-effects even at “macroscopic” distances ~100 μm. However, this prediction needs to be corrected to account for the deviation from the ω−2 dependence of phonon lifetimes at sub-THz frequencies due to the transition from Landau-Rumer to Akhiezer mechanism of phonon dissipation.

Thermal conductivity of ZnO thin film produced by reactive sputtering

2012 ◽  
Vol 111 (8) ◽  
pp. 084320 ◽  
Author(s):  
Yibin Xu ◽  
Masahiro Goto ◽  
Ryozo Kato ◽  
Yoshihisa Tanaka ◽  
Yutaka Kagawa
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Reactive Sputtering ◽  
Zno Thin Film

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Improvements of on-membrane method for thin film thermal conductivity and emissivity measurements

2005 ◽  
Vol 117 (2) ◽  
pp. 203-210 ◽  
Author(s):  
A. Jacquot ◽  
G. Chen ◽  
H. Scherrer ◽  
A. Dauscher ◽  
B. Lenoir
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Membrane Method ◽  
Emissivity Measurements

Chemical-Vapor-Deposited Materials for High Thermal Conductivity Applications

MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Thermal Conductivity ◽  
Solid Materials ◽  
Chemical Vapor Deposited

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.

scholarly journals Thin-Film Thermal Conductivity Measurements Using Superconducting Nanowires

2018 ◽  
Vol 193 (3-4) ◽  
pp. 380-386 ◽  
Author(s):  
J. P. Allmaras ◽  
A. G. Kozorezov ◽  
A. D. Beyer ◽  
F. Marsili ◽  
R. M. Briggs ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Conductivity Measurements ◽  
Superconducting Nanowires
Sign in / Sign up

Export Citation Format

Share Document