Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

1997 ◽  
Vol 81 (7) ◽  
pp. 3117-3123 ◽  
Author(s):  
H. Wang ◽  
A. A. Hopgood ◽  
G. I. Ng
Keyword(s):  
Growth Suppression ◽  
Line Defect ◽  
Dark Line ◽  
Defect Growth

Suppression ofDark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5637-5641 ◽  
Author(s):  
Yoshiaki Hasegawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Line Defect ◽  
Single Quantum ◽  
Dark Line ◽  
Single Quantum Well ◽  
Si Substrates ◽  
Defect Growth

Stress‐Induced Dark Line Defect Formation in GaAlAs : Si LED's

1981 ◽  
Vol 128 (3) ◽  
pp. 661-669 ◽  
Author(s):  
A. K. Chin ◽  
W. C. King ◽  
T. J. Leonard ◽  
R. J. Roedel ◽  
C. L. Zipfel ◽  
...  
Keyword(s):  
Defect Formation ◽  
Line Defect ◽  
Dark Line

Strain-Relieved Reliable Lasers Grown on Si By MOCVD

1992 ◽  
Vol 281 ◽  
Author(s):  
Takashi Egawa ◽  
Yoshiaki Hasegawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Intermediate Layer ◽  
Defect Formation ◽  
Laser Diodes ◽  
Electrical Characteristics ◽  
Line Defect ◽  
Dark Line ◽  
Si Substrates ◽  
Forward Current ◽  
Current Voltage ◽  
Line Defects

ABSTRACTConventional GaAs-based laser diodes grown on Si substrates suffer from rapid degradation, which results from the deteriorations of optical and electrical characteristics. Electroluminescence observation shows that the optical deterioration is caused by the formation of dark-line defects. The current-voltage (I-V) characteristic of the p-n junction is degraded with aging, and results in an ohmic-like under a higher ambient temperature and a larger forward current. The deterioration of the I-V characteristic is caused by defect-accelerated impurity diffusion because the growth of GaAs on Si substrates (GaAs/Si) involves the high dislocation density, the large tensile stress and the large amount of Si near the GaAs/Si interface. A significant improvement in reliability has been achieved in the strain-relieved AlGaAs/InGaAs laser diode on Si grown with the InGaAs intermediate layer. The stress relief by the InGaAs active layer and the reduction of the dark-line defect formation by the InGaAs intermediate layer are required to fabricate reliable GaAs-based laser diodes on Si substrates.

Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

1990 ◽  
Vol 2 (8) ◽  
pp. 531-533 ◽  
Author(s):  
R.G. Waters ◽  
D.P. Bour ◽  
S.L. Yellen ◽  
N.F. Ruggieri
Keyword(s):  
Quantum Well ◽  
Defect Formation ◽  
Quantum Well Lasers ◽  
Line Defect ◽  
Dark Line

STEM-HAADF electron microscopy analysis of the central dark line defect of human tooth enamel crystallites

2007 ◽  
Vol 19 (2) ◽  
pp. 877-882 ◽  
Author(s):  
Jose Reyes Gasga ◽  
Georgina Carbajal-de-la-Torre ◽  
Etienne Bres ◽  
Ivet M. Gil-Chavarria ◽  
Ana G. Rodríguez-Hernández ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Tooth Enamel ◽  
Human Tooth ◽  
Line Defect ◽  
Dark Line ◽  
Human Tooth Enamel ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis

Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation

1982 ◽  
Vol 40 (11) ◽  
pp. 921-923 ◽  
Author(s):  
K. Endo ◽  
S. Matsumoto ◽  
H. Kawano ◽  
I. Sakuma ◽  
T. Kamejima
Keyword(s):  
Defect Formation ◽  
Line Defect ◽  
Dark Line ◽  
Rapid Degradation ◽  
Double Heterostructure

〈100〉 dark line defect in II‐VI blue‐green light emitters

1994 ◽  
Vol 65 (7) ◽  
pp. 801-803 ◽  
Author(s):  
S. Guha ◽  
H. Cheng ◽  
M. A. Haase ◽  
J. M. DePuydt ◽  
J. Qiu ◽  
...  
Keyword(s):  
Green Light ◽  
Line Defect ◽  
Light Emitters ◽  
Dark Line
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