Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

1990 ◽  
Vol 2 (8) ◽  
pp. 531-533 ◽  
Author(s):  
R.G. Waters ◽  
D.P. Bour ◽  
S.L. Yellen ◽  
N.F. Ruggieri
Keyword(s):  
Quantum Well ◽  
Defect Formation ◽  
Quantum Well Lasers ◽  
Line Defect ◽  
Dark Line

Suppression ofDark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5637-5641 ◽  
Author(s):  
Yoshiaki Hasegawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Line Defect ◽  
Single Quantum ◽  
Dark Line ◽  
Single Quantum Well ◽  
Si Substrates ◽  
Defect Growth

Stress‐Induced Dark Line Defect Formation in GaAlAs : Si LED's

1981 ◽  
Vol 128 (3) ◽  
pp. 661-669 ◽  
Author(s):  
A. K. Chin ◽  
W. C. King ◽  
T. J. Leonard ◽  
R. J. Roedel ◽  
C. L. Zipfel ◽  
...  
Keyword(s):  
Defect Formation ◽  
Line Defect ◽  
Dark Line

Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 2994-2999 ◽  
Author(s):  
Yoshiaki Hasegawa ◽  
TakashiEgawa ◽  
Takashi Jimbo ◽  
MasayoshiUmeno
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Dark Line ◽  
Si Substrates ◽  
Line Defects ◽  
Dark Line Defects

Strain-Relieved Reliable Lasers Grown on Si By MOCVD

1992 ◽  
Vol 281 ◽  
Author(s):  
Takashi Egawa ◽  
Yoshiaki Hasegawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Intermediate Layer ◽  
Defect Formation ◽  
Laser Diodes ◽  
Electrical Characteristics ◽  
Line Defect ◽  
Dark Line ◽  
Si Substrates ◽  
Forward Current ◽  
Current Voltage ◽  
Line Defects

ABSTRACTConventional GaAs-based laser diodes grown on Si substrates suffer from rapid degradation, which results from the deteriorations of optical and electrical characteristics. Electroluminescence observation shows that the optical deterioration is caused by the formation of dark-line defects. The current-voltage (I-V) characteristic of the p-n junction is degraded with aging, and results in an ohmic-like under a higher ambient temperature and a larger forward current. The deterioration of the I-V characteristic is caused by defect-accelerated impurity diffusion because the growth of GaAs on Si substrates (GaAs/Si) involves the high dislocation density, the large tensile stress and the large amount of Si near the GaAs/Si interface. A significant improvement in reliability has been achieved in the strain-relieved AlGaAs/InGaAs laser diode on Si grown with the InGaAs intermediate layer. The stress relief by the InGaAs active layer and the reduction of the dark-line defect formation by the InGaAs intermediate layer are required to fabricate reliable GaAs-based laser diodes on Si substrates.

Dark‐line observations in failed quantum well lasers

1988 ◽  
Vol 52 (16) ◽  
pp. 1347-1348 ◽  
Author(s):  
R. G. Waters ◽  
R. K. Bertaska
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Dark Line

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Neil Ives ◽  
Steven C. Moss
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Dark Line ◽  
Time Resolved ◽  
Transient Spectroscopy ◽  
Strained Quantum Well ◽  
Broad Area Lasers

AbstractDegradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation

1982 ◽  
Vol 40 (11) ◽  
pp. 921-923 ◽  
Author(s):  
K. Endo ◽  
S. Matsumoto ◽  
H. Kawano ◽  
I. Sakuma ◽  
T. Kamejima
Keyword(s):  
Defect Formation ◽  
Line Defect ◽  
Dark Line ◽  
Rapid Degradation ◽  
Double Heterostructure

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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