Sign change of tunnel magnetoresistance ratio with temperature in epitaxial Fe/MgO/Co2MnSn magnetic tunnel junctions

2011 ◽  
Vol 110 (7) ◽  
pp. 073905 ◽  
Author(s):  
M. A. Tanaka ◽  
T. Hori ◽  
K. Mibu ◽  
K. Kondou ◽  
T. Ono ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance ◽  
Sign Change ◽  
Magnetoresistance Ratio

The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions

Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 8142-8148 ◽  
Author(s):  
Min-Su Jeon ◽  
Kyo-Suk Chae ◽  
Du-Yeong Lee ◽  
Yasutaka Takemura ◽  
Seung-Eun Lee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance ◽  
Magnetoresistance Ratio

CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

2010 ◽  
Vol 49 (4) ◽  
pp. 04DM04 ◽  
Author(s):  
Kotaro Mizunuma ◽  
Shoji Ikeda ◽  
Hiroyuki Yamamoto ◽  
Hua Dong Gan ◽  
Katsuya Miura ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
Magnetoresistance Ratio

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance
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