scholarly journals Efficient evanescent wave coupling conditions for waveguide-integrated thin-film Si/Ge photodetectors on silicon-on-insulator/germanium-on-insulator substrates

2011 ◽  
Vol 110 (8) ◽  
pp. 083115 ◽  
Author(s):  
Donghwan Ahn ◽  
Lionel C. Kimerling ◽  
Jurgen Michel
Keyword(s):  
Thin Film ◽  
Evanescent Wave ◽  
Silicon On Insulator ◽  
Wave Coupling ◽  
Coupling Conditions

scholarly journals Compact Mode Division MUX/DEMUX Using Enhanced Evanescent-Wave Coupling on Silicon-on-Insulator (SOI) Platform for 11-Tbit/s Broadband Transmission

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 219881-219890
Author(s):  
Guan-Hong Chen ◽  
Jui-Feng Tsai ◽  
Ching-Wei Peng ◽  
Pin-Cheng Kuo ◽  
Chun-Jui Chen ◽  
...  
Keyword(s):  
Evanescent Wave ◽  
Silicon On Insulator ◽  
Wave Coupling

Leakage current models of thin film silicon-on-insulator devices

1998 ◽  
Vol 72 (10) ◽  
pp. 1199-1201 ◽  
Author(s):  
Hank Shin ◽  
Stella Hong ◽  
Tom Wetteroth ◽  
Syd R. Wilson ◽  
Dieter K. Schroder
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Silicon On Insulator ◽  
Thin Film Silicon

Phase-locked pair of terahertz quantum cascade lasers through evanescent-wave coupling

2020 ◽  
Vol 109 ◽  
pp. 103427
Author(s):  
Chang Gaolei ◽  
Zhu Huan ◽  
Yu Chenren ◽  
Zhu Haiqing ◽  
Xu Gangyi ◽  
...  
Keyword(s):  
Evanescent Wave ◽  
Quantum Cascade Lasers ◽  
Wave Coupling ◽  
Quantum Cascade ◽  
Cascade Lasers

Thin-film InGaN∕GaN Vertical Light Emitting Diodes Using GaN on Silicon-On-Insulator Substrates

2011 ◽  
Vol 14 (11) ◽  
pp. H460 ◽  
Author(s):  
Surani Bin Dolmanan ◽  
Siew Lang Teo ◽  
Vivian Kaixin Lin ◽  
Hui Kim Hui ◽  
Armin Dadgar ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Silicon On Insulator ◽  
Light Emitting

STUDY OF ELECTRICAL CHARACTERISTIC FOR 50NM AND 10NM SOI BODY THICKNESS IN MOSFET DEVICE

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
M.N.I.A Aziz ◽  
F. Salehuddin ◽  
A.S.M. Zain ◽  
K.E. Kaharudin
Keyword(s):  
Thin Film ◽  
Electrical Characteristic ◽  
Silicon On Insulator ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Doping Density ◽  
Soi Mosfet ◽  
Buried Oxide ◽  
Soi Technology ◽  
Better Than

Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effect (SCE) problems. The SOI is believed to be capable of suppressing the SCE, thereby improving the overall electrical characteristics of MOSFET device. SCE in SOI MOSFET is heavily influenced by thin film thickness, thin-film doping density and buried oxide (BOX) thickness. This paper will analyze the effect of BOX towards SOI MOSFET device. The 50nm and 10nm thickness of buried oxide in SOI MOSFET was developed by using SILVACO TCAD tools, specifically known as Athena and Atlas modules. From the observation, the electrical characteristic of 100nm thickness is slightly better than 50nm and 10nm. It is observed that the value drive current of 10nm and 100nm thickness SOI MOSFET was 6.9% and 11% lower than 50nm respectively, but the overall 50nm is superior. However, the electrical characteristics of 10nm SOI MOSFET are still closer and within the range of ITRS 2013 prediction.

scholarly journals Unidirectional evanescent-wave coupling from circularly polarized electric and magnetic dipoles: An angular spectrum approach

2017 ◽  
Vol 95 (24) ◽  
Author(s):  
Michela F. Picardi ◽  
Alejandro Manjavacas ◽  
Anatoly V. Zayats ◽  
Francisco J. Rodríguez-Fortuño
Keyword(s):  
Evanescent Wave ◽  
Angular Spectrum ◽  
Wave Coupling ◽  
Magnetic Dipoles ◽  
Circularly Polarized
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