Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe

1997 ◽  
Vol 81 (5) ◽  
pp. 2425-2428 ◽  
Author(s):  
Fang Lu ◽  
Shouqi Wang ◽  
Hyundon Jung ◽  
Ziqiang Zhu ◽  
Takafumi Yao
Keyword(s):  
Admittance Spectroscopy ◽  
Electron Traps ◽  
Nitrogen Doped

Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method

2008 ◽  
Vol 1069 ◽  
Author(s):  
Pawel Kaminski ◽  
Michal Kozubal ◽  
Krzysztof Grasza ◽  
Emil Tymicki
Keyword(s):  
Single Crystals ◽  
Defect Structure ◽  
Deep Level ◽  
Nitrogen Concentration ◽  
Activation Energies ◽  
Electron Traps ◽  
Nitrogen Doped ◽  
Significant Change

ABSTRACTAn effect of the nitrogen concentration on the concentrations of deep-level defects in bulk 6H-SiC single crystals is investigated. Six electron traps labeled as T1A, T1B, T2, T3, T4 and T5 with activation energies of 0.34, 0.40, 0.64, 0.67, 0.69, and 1.53 eV, respectively, were revealed. The traps T1A (0.34 eV) and T1B (0.40 eV), observed in the samples with the nitrogen concentration ranging from ∼2×1017 to 5×1017 cm−3, are attributed to complexes formed by carbon vacancies located at various lattice sites and carbon antisites. The concentrations of traps T2 (0.64 eV) and T3 (0.67 eV) have been found to rise from ∼5×1015 to ∼1×1017 cm−3 with increasing the nitrogen concentration from ∼2×1017 to ∼2.0×1018 cm−3. These traps are assigned to complexes involving silicon vacancies occupying hexagonal and quasi-cubic sites, respectively, and nitrogen atoms. The trap T4 (0.69 eV) concentration also substantially rises with increasing the nitrogen concentration and it is likely to be related to complexes formed by carbon antisites and nitrogen atoms. The midgap trap T5 (1.53 eV) is presumably associated with vanadium contamination. The presented results show that doping with nitrogen involves a significant change in the defect structure of 6H-SiC single crystals.

Boron-Nitrogen Doped Dihydroindeno[1,2-b]fluorene Derivatives as Acceptors in Organic Solar Cells

2019 ◽  
Author(s):  
Matthew Morgan ◽  
Maryam Nazari ◽  
Thomas Pickl ◽  
J. Mikko Rautiainen ◽  
Heikki M. Tuononen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Broad Absorption ◽  
Nitrogen Doped ◽  
Large Depth ◽  
End Products ◽  
Boron Nitrogen ◽  
The Way

The electrophilic borylation of 2,5-diarylpyrazines results in the formation of boron-nitrogen doped dihydroindeno[1,2-<i>b</i>]fluorene which can be synthesized via mildly air-sensitive techniques and the end products handled readily under atmosphereic conditions. Through transmetallation via diarylzinc reagents a series of derivatives were sythesized which show broad absorption profiles that highlight the versatility of this backbone to be used in organic solar cell devices. These compounds can be synthesized in large yields, in alow number of steps and functionalized at many stages along the way providing a large depth of possibilities. Exploratory device paramaters were studied and show PCE of 2%.

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

2020 ◽  
Author(s):  
Fumihiro Fujie ◽  
Shunta Harada ◽  
Kenji Hanada ◽  
Hiromasa Suo ◽  
Haruhiko Koizumi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stacking Fault ◽  
X Ray ◽  
Nitrogen Doped ◽  
Fault Behavior
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