Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 110 (6) ◽  
pp. 063110 ◽  
Author(s):  
M. Siekacz ◽  
M. Sawicka ◽  
H. Turski ◽  
G. Cywiński ◽  
A. Khachapuridze ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optically Pumped

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2 O3

2010 ◽  
Vol 207 (6) ◽  
pp. 1313-1317 ◽  
Author(s):  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
T. V. Shubina ◽  
A. A. Toropov ◽  
K. G. Belyaev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optically Pumped

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

2019 ◽  
Vol 28 (3) ◽  
pp. 034202
Author(s):  
Jin-Ming Shang ◽  
Jian Feng ◽  
Cheng-Ao Yang ◽  
Sheng-Wen Xie ◽  
Yi Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optically Pumped ◽  
High Quality ◽  
Disk Laser ◽  
Semiconductor Disk Laser

Molecular beam epitaxy of GaSb/AlSb optical device layers on Si(100)

1986 ◽  
Vol 67 ◽  
Author(s):  
R. J. Malik ◽  
J. P. van der Ziel ◽  
B. F. Levine ◽  
C. G. Bethea ◽  
P. M. Petroff ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optically Pumped ◽  
Optical Device ◽  
Large Lattice ◽  
Photoconductive Detectors ◽  
Film Nucleation ◽  
First Time

ABSTRACTWe report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy. High quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8μm have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in-situ by reflection high energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.

Sign in / Sign up

Export Citation Format

Share Document