Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique

1997 ◽  
Vol 81 (3) ◽  
pp. 1518-1521 ◽  
Author(s):  
S. Sato ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Cluster Beam ◽  
Photo Oxidation ◽  
Evaporation Technique

Phase Transformation of Germanium Ultrafine Particles at High Temperature

1995 ◽  
Vol 405 ◽  
Author(s):  
S. Nozaki ◽  
S. Sato ◽  
H. Ono ◽  
H. Morisaki ◽  
M. Iwase
Keyword(s):  
Phase Transformation ◽  
Ultrafine Particles ◽  
Uv Light ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Diamond Structure ◽  
Double Peak ◽  
Photo Oxidation ◽  
Evaporation Technique ◽  
Gas Evaporation Technique

AbstractGermanium (Ge) films were deposited on substrates whose temperature was kept at room (Ge-RT) or liquid nitrogen temperature (Ge-LNT) by the cluster-beam evaporation technique. The Raman spectra of both films with a double peak suggest that the crystal structure is not the ordinary diamond but the tetragonal one. The critical temperature for the phase transformation from the tetragonal into the diamond structure is found much higher than that for the Ge nanostructures deposited by the gas-evaporation technique. The Ge-LNT sample exhibits photooxidation and photoluminescence (PL) when it is exposed to the UV light. Their PL and optical absorption characteristics are strongly influenced by a combination of the photo-oxidation and thermal annealing treatments.

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Tetragonal germanium flims deposited by the cluster‐beam evaporation technique

1995 ◽  
Vol 66 (23) ◽  
pp. 3176-3178 ◽  
Author(s):  
S. Sato ◽  
S. Nozaki ◽  
H. Morisaki ◽  
M. Iwase
Keyword(s):  
Cluster Beam ◽  
Evaporation Technique

Wurtzite Silicon Nanocrystals Deposited by the Cluster-Beam Evaporation Technique

2001 ◽  
Vol 223 (1) ◽  
pp. 41-45 ◽  
Author(s):  
J.Y. Zhang ◽  
H. Ono ◽  
K. Uchida ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Silicon Nanocrystals ◽  
Cluster Beam ◽  
Evaporation Technique
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