Coulomb-blockade effect observed at room temperature in Ge nanocrystalline films deposited by the cluster-beam evaporation technique

2000 ◽  
Vol 76 (4) ◽  
pp. 445-447 ◽  
Author(s):  
Souri Banerjee ◽  
S. Nozaki ◽  
H. Morisaki
1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.


2019 ◽  
Author(s):  
Chem Int

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.


2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature


2006 ◽  
Vol 3 (3) ◽  
pp. 534-539
Author(s):  
Baghdad Science Journal

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise


2019 ◽  
Vol 1 (1) ◽  
pp. 42-45
Author(s):  
Tamiloli Devendhiran ◽  
Keerthika Kumarasamy ◽  
Mei–Ching Lin

Single crystals of 2-Aminothiazole 3,5-Dinitrobenzoic acid has been synthesized and good quality optical crystals were grown by slow evaporation technique at room temperature. The crystallinity nature of the grown crystal was confirmed from X-ray diffraction technique. An optical transmittance study was also carried out by UV – Vis spectra. FTIR spectra confirm the presence of functional groups in the grown crystal. The dielectric measurements were carried out in the range of 50Hz to 2MHz. The dielectric constant was seen to increase exponentially at lower frequencies. The microhardness studies were carried out using Vickers hardness indenter. Photoluminescence study shows that maximum emission occurs at 435nm.


2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.


2006 ◽  
Vol 11-12 ◽  
pp. 595-598
Author(s):  
Dong Liang Peng ◽  
K. Sumiyama ◽  
H. Yamada ◽  
Takehiko Hihara ◽  
T. Uchida

Highly-densified Fe cluster-assembled films were obtained at room temperature by an energetic cluster deposition. Fe clusters were produced using a plasma-gas-condensation (PGC)-type cluster deposition apparatus with a high cluster productivity. Ionized clusters in a cluster beam were electrically accelerated and directly deposited onto a substrate together with neutral clusters from the same cluster source. By increasing the impact energy of the ionized clusters up to about 1 eV/atom, the obtained cluster-assemblies have packing fractions higher than 0.8 without any serious size change, and result in a soft magnetic behavior up to a frequency range of few hundred MHz.


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