Roles of SiH[sub 4] in Growth, Structural Changes and Optical Properties Of Nanocrystalline Silicon Thin Films

2011 ◽  
Author(s):  
A. M. Ali ◽  
T. Inokuma ◽  
A. Al-Hajry ◽  
H. Kobayashi ◽  
I. Umezu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Changes ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition

1998 ◽  
Vol 80 (1-4) ◽  
pp. 223-228 ◽  
Author(s):  
M.A Laguna ◽  
V Paillard ◽  
B Kohn ◽  
M Ehbrecht ◽  
F Huisken ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nanocrystalline Silicon ◽  
Cluster Beam ◽  
Silicon Thin Films ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Effects of high hydrogen dilution ratio on optical properties of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 257 (23) ◽  
pp. 9840-9845 ◽  
Author(s):  
Liqiang Guo ◽  
Jianning Ding ◽  
Jichang Yang ◽  
Guanggui Cheng ◽  
Zhiyong Ling ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

Sign in / Sign up

Export Citation Format

Share Document