Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

2012 ◽  
Vol 100 (8) ◽  
pp. 082905 ◽  
Author(s):  
J. Müller ◽  
S. Knebel ◽  
D. Bräuhaus ◽  
U. Schröder
Keyword(s):  
Thin Films ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
Silicon Doped

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 9 (10) ◽  
pp. 589-593 ◽  
Author(s):  
Yan Guan ◽  
Dayu Zhou ◽  
Jin Xu ◽  
Xiaohua Liu ◽  
Fei Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Rayleigh Law ◽  
Silicon Doped

Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

2017 ◽  
Vol 122 (14) ◽  
pp. 144105 ◽  
Author(s):  
Faizan Ali ◽  
Xiaohua Liu ◽  
Dayu Zhou ◽  
Xirui Yang ◽  
Jin Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Silicon Doped

scholarly journals Bi4Ti3O12 Ferroelectric Thin Films: Morphology and Electrical Characteristics

1997 ◽  
Vol 7 (6) ◽  
pp. 1221-1226 ◽  
Author(s):  
F. Soares-Carvalho ◽  
I. Jauberteau ◽  
P. Thomas ◽  
J. P. Mercurio
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films

2018 ◽  
Vol 113 (12) ◽  
pp. 122901 ◽  
Author(s):  
C. Mart ◽  
M. Czernohorsky ◽  
S. Zybell ◽  
T. Kämpfe ◽  
W. Weinreich
Keyword(s):  
Thin Films ◽  
Frequency Domain ◽  
Hafnium Oxide ◽  
Domain Analysis ◽  
Frequency Domain Analysis ◽  
Silicon Doped ◽  
Pyroelectric Response

scholarly journals Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films

2018 ◽  
Vol 2 (12) ◽  
Author(s):  
Shishir Pandya ◽  
Gabriel Velarde ◽  
Lei Zhang ◽  
Lane W. Martin
Keyword(s):  
Thin Films ◽  
Hafnium Oxide ◽  
Oxide Thin Films ◽  
Silicon Doped
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